Semiconductor module

Abstract

A semiconductor module includes: a dielectric film that has a first surface and a second surface opposed to the first surface, the first surface including a first mounting area and a second mounting area; a plurality of circuit parts that includes a first circuit part and a second circuit part, the first circuit part being mounted on the first mounting area, the second circuit part being mounted on the second mounting area; an electrode layer that is disposed on the second surface and includes a plurality of electrode portions to be electrically connected to the plurality of circuit parts; and a sealing layer that includes a first sealing resin portion and a second sealing resin portion and seals the plurality of circuit parts, the first sealing resin portion covering the first mounting area, the second sealing resin portion being formed of a resin material softer than the first sealing resin portion and covering the second mounting area.

What is claimed is: 
     
         1 . A semiconductor module, comprising:
 a dielectric film that has a first surface and a second surface opposed to the first surface, the first surface including a first mounting area and a second mounting area;   a plurality of circuit parts that includes a first circuit part and a second circuit part, the first circuit part being mounted on the first mounting area, the second circuit part being mounted on the second mounting area;   an electrode layer that is disposed on the second surface and includes a plurality of electrode portions to be electrically connected to the plurality of circuit parts; and   a sealing layer that includes a first sealing resin portion and a second sealing resin portion and seals the plurality of circuit parts, the first sealing resin portion covering the first mounting area, the second sealing resin portion being formed of a resin material softer than the first sealing resin portion and covering the second mounting area.   
     
     
         2 . The semiconductor module according to  claim 1 , wherein
 the first circuit part includes a passive device, and   the second circuit part includes a power semiconductor device.   
     
     
         3 . The semiconductor module according to  claim 1 , further comprising
 a frame member disposed on the first surface, wherein   the frame member includes a first opening and a second opening, the first opening dividing the first mounting area and housing the first sealing resin portion, and the second opening dividing the second mounting area and housing the second sealing resin portion.   
     
     
         4 . The semiconductor module according to  claim 3 , wherein
 the frame member is formed of a metal material or a ceramic material.   
     
     
         5 . The semiconductor module according to  claim 1 , wherein
 the first sealing resin portion includes a first portion and a second portion having a rectangular shape, the first portion covering the first mounting area, the second portion dividing the second mounting area and being disposed around the second sealing resin portion.   
     
     
         6 . The semiconductor module according to  claim 1 , wherein
 the first sealing resin portion is formed of an epoxy resin material, and   the second sealing resin portion is formed of a silicone resin material.   
     
     
         7 . The semiconductor module according to  claim 1 , wherein
 the dielectric film is formed of polyimide.   
     
     
         8 . A semiconductor module, comprising:
 a polyimide film having flexibility, the polyimide film having a first surface and a second surface opposed to the first surface;   a plurality of circuit parts provided on the first surface;   an electrode layer that is electrically connected to the plurality of circuit parts via vias provided in the polyimide film, and includes a plurality of electrode portions, the plurality of electrode portions being disposed on the second surface and having a thickness in a range of equivalent to the polyimide film to twice or twice or more the polyimide film;   a sealing layer that covers the first surface; and   a frame member that surrounds the sealing layer on the first surface and is exposed to side surfaces located at four sides of the dielectric film.   
     
     
         9 . The semiconductor module according to  claim 8 , wherein
 each of the plurality of electrode portions is provided around a side surface of the polyimide film to have a width of not less than 1 cm and not more than 2 cm, and   the frame member is provided at a position overlapping with the plurality of electrode portions.   
     
     
         10 . The semiconductor module according to  claim 8 , wherein
 the plurality of electrode portions includes a comb-shape electrode that is an electrode of a power transistor, the power transistor being one of the plurality of circuit parts.