Support assembly

Abstract

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

What is claimed is: 
     
         1 . A processing system, comprising:
 a transfer chamber;   a plurality of load lock chambers in selective communication with the transfer chamber; and   a plurality of processing chambers coupled to and in selective communication with the transfer chamber, wherein one of the plurality of processing chambers comprises an etch chamber adapted to remove native oxides from a substrate prior to processing in a remainder of the plurality of processing chambers.   
     
     
         2 . The processing system of  claim 1 , wherein one of the remainder of the plurality of processing chambers comprises a deposition chamber. 
     
     
         3 . The processing system of  claim 2 , wherein the deposition chamber comprises a CVD chamber adapted to form a film on the substrate. 
     
     
         4 . The processing system of  claim 1 , wherein the etch chamber is coupled to plasma gas source. 
     
     
         5 . The processing system of  claim 1 , wherein the etch chamber comprises a body defining a volume having a substrate support assembly positioned therein. 
     
     
         6 . The processing system of  claim 5 , wherein the body comprises a plasma cavity to deliver a plasma to the volume. 
     
     
         7 . The processing system of  claim 6 , wherein the plasma is a remote plasma. 
     
     
         8 . A processing system, comprising:
 a transfer chamber;   a plurality of load lock chambers in selective communication with the transfer chamber; and   a plurality of processing chambers coupled to and in selective communication with the transfer chamber, wherein one of the plurality of processing chambers comprises pre-clean chamber adapted to remove native oxides from a substrate prior to processing in a remainder of the plurality of processing chambers.   
     
     
         9 . The processing system of  claim 1 , wherein the pre-clean chamber comprises a body defining a volume and a plasma cavity to deliver a remote plasma thereto.