Mercury chalcoiodides for room temperature radiation detection

Abstract

Methods and devices for detecting incident radiation, such as incident X-rays or gamma-rays, are provided. The methods and devices use single-crystalline mercury chalcoiodide compounds having the formula Hg 3 Q 2 I 2 , where Q represents a chalcogen atom or a combination of chalcogen atoms, as photoelectric materials. Also provided are methods for growing single-crystals of the mercury chalcoiodide compounds using external organic chemical transport agents.

What is claimed is: 
     
         1 . A method for detecting incident radiation, the method comprising:
 exposing a material comprising a single-crystal of an inorganic compound having the formula Hg 3 Q 2 I 2 , where Q represents a chalcogen atom or a combination of chalcogen atoms, to incident X-ray, gamma-ray, or nuclear radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material; and   measuring at least one of the energy or intensity of the absorbed incident radiation by detecting the generated electrons, holes, or both.   
     
     
         2 . The method of  claim 1 , wherein the material is exposed to the gamma-ray radiation. 
     
     
         3 . The method of  claim 1 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm. 
     
     
         4 . The method of  claim 1 , wherein Q represents Se. 
     
     
         5 . The method of  claim 4 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm. 
     
     
         6 . The method of  claim 4 , wherein the single-crystal has a width of at least 5 mm. 
     
     
         7 . The method of  claim 4 , wherein the single-crystal has a length of at least 1 cm and a thickness of at least 2 mm. 
     
     
         8 . The method of  claim 1 , wherein Q represents S. 
     
     
         9 . The method of  claim 1 , wherein Q represents Te. 
     
     
         10 . The method of  claim 1 , wherein the method is carried out at temperatures in the range from about 20° C. to about 26° C. 
     
     
         11 . A device for the detection of incident radiation comprising:
 a material comprising a single-crystal of an inorganic compound having the formula Hg 3 Q 2 I 2 , where Q represents a chalcogen atom or a combination of chalcogen atoms;   a first electrode in electrical communication with the material;   a second electrode in electrical communication with the material, wherein   the first and second electrodes are configured to apply an electric field across the material; and   a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident radiation.   
     
     
         12 . The device of  claim 11 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm. 
     
     
         13 . The device of  claim 11 , wherein Q represents Se. 
     
     
         14 . The device of  claim 13 , wherein the single-crystal has a length of at least 5 mm and a thickness of at least 1 mm. 
     
     
         15 . The device of  claim 13 , wherein the single-crystal has a width of at least 5 mm. 
     
     
         16 . The device of  claim 13 , wherein the single-crystal has a length of at least 1 cm and a thickness of at least 2 mm. 
     
     
         17 . The device of  claim 11 , wherein Q represents S. 
     
     
         18 . The device of  claim 11 , wherein Q represents Te. 
     
     
         19 . A single-crystal of Hg 3 Se 2 I 2  having a length of at least 5 mm and a thickness of at least 1 mm. 
     
     
         20 . The single-crystal of  claim 19  having a width of at least 5 mm. 
     
     
         21 . The single-crystal of  claim 20  having a thickness of at least 2 mm. 
     
     
         22 . A method of making a single-crystal of an inorganic compound having the formula Hg 3 Q 2 I 2 , where Q represents a chalcogen atom or a combination of chalcogen atoms, the method comprising growing the single-crystal via chemical vapor transport growth in the presence of an organic polymer vapor transport agent. 
     
     
         23 . The method of  claim 22 , wherein the organic polymer vapor transport agent is polyethylene. 
     
     
         24 . The method of  claim 22 , wherein Q represents Se. 
     
     
         25 . The method of  claim 24 , wherein the chemical vapor transport growth is carried out in the presence of the organic polymer vapor transport agent and an iodine transport agent. 
     
     
         26 . The method of  claim 25 , wherein the organic polymer vapor transport agent is polyethylene.