Switch body connections to achieve soft breakdown

Abstract

Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.

What is claimed is: 
     
         1 . A field-effect transistor (FET) comprising:
 an assembly of source, gate, and drain implemented on an active region;   a first body contact implemented at a first end of the assembly; and   a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the field-effect transistor.   
     
     
         2 . The field-effect transistor of  claim 1  wherein the first body contact and the second body contact are positioned substantially symmetrically about a center line of the field-effect transistor. 
     
     
         3 . The field-effect transistor of  claim 1  wherein the first body contact and the second body contact are coupled to a diode. 
     
     
         4 . The field-effect transistor of  claim 3  wherein the diode is a P-N junction diode. 
     
     
         5 . The field-effect transistor of  claim 3  wherein the diode is a PMOS field-effect transistor. 
     
     
         6 . The field-effect transistor of  claim 1  wherein the field-effect transistor includes a silicon-on-insulator (SOI) substrate. 
     
     
         7 . The field-effect transistor of  claim 1  wherein the active region is substantially the same size as an active region of a similar field-effect transistor including a single body contact. 
     
     
         8 . The field-effect transistor of  claim 1  wherein each of the source, gate, and drain of the assembly is implemented in a finger configuration with gate fingers extending in a direction such that the first body contact is implemented proximate to a first end of a gate finger and the second body contact is implemented proximate to a second end of the gate finger along the direction of extension of the gate fingers. 
     
     
         9 . The field-effect transistor of  claim 8  wherein the finger configuration of each of the first and second assemblies results in source and drain fingers being interleaved with the gate fingers. 
     
     
         10 . The field-effect transistor of  claim 9  wherein the source fingers and the drain fingers are arranged in alternating rows. 
     
     
         11 . The field-effect transistor of  claim 1  wherein the second body contact is implemented to reduce a body effect on the field-effect transistor. 
     
     
         12 . The field-effect transistor of  claim 1  wherein the second body contact is implemented to improve linearity of the field-effect transistor. 
     
     
         13 . The field-effect transistor of  claim 1  wherein the second body contact is implemented to improve breakdown behavior of the field-effect transistor. 
     
     
         14 . A radio-frequency (RF) module comprising:
 a packaging substrate configured to receive a plurality of devices; and   a die mounted on the packaging substrate, the die including a field-effect transistor (FET) having an assembly of source, gate, and drain implemented on an active region, the field-effect transistor further including a first body contact implemented at a first end of the assembly and a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the field-effect transistor.   
     
     
         15 . The radio-frequency module of  claim 14  wherein the radio-frequency module is a switch module. 
     
     
         16 . The radio-frequency module of  claim 14  wherein the die is a silicon-on-insulator (SOI) die. 
     
     
         17 . A wireless device comprising:
 a transceiver configured to process radio-frequency (RF) signals;   a radio-frequency module in communication with the transceiver, the radio-frequency module including a switching device having a field-effect transistor (FET), the field-effect transistor including an assembly of source, gate, and drain implemented on an active region, the field-effect transistor further including a first body contact implemented at a first end of the assembly and a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the field-effect transistor; and   an antenna in communication with the radio-frequency module, the antenna configured to facilitate transmitting and/or receiving of the radio-frequency signals.   
     
     
         18 . The wireless device of  claim 17  wherein the radio-frequency module is a switch module.