Method for repairing heaters and chucks used in semiconductor processing

Abstract

A method for the repair of a heater, or an electrostatic chuck, using a ceramic top layer joined with a hermetically sealed joint. The heater or electrostatic chuck may be machined down to remove a damaged top surface, and to allow for the joining of a new top surface. The new top pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

What is claimed is: 
     
         1 . A process for the repair of a substrate support pedestal, said process comprising the steps of:
 machining down a top surface of a substrate support pedestal to create a first new top surface, said substrate support pedestal comprising aluminum nitride;   placing a braze layer in between said first new top surface of said substrate support pedestal and a new top ceramic layer, said braze layer comprising metallic aluminum; and   brazing said new top ceramic layer to said first new top surface of said substrate support pedestal, thereby creating a hermetic joint between said new top ceramic layer to said first new top surface of said substrate support pedestal, wherein the step of machining down a top surface of a substrate support pedestal to create a first new top surface comprises machining through and removing an RF antenna.   
     
     
         2 . The process of  claim 1  wherein said braze layer comprises metallic aluminum of greater than 99% by weight. 
     
     
         3 . The process of  claim 2  wherein the step of brazing said new ceramic top layer to said first new top surface of said substrate support pedestal comprises brazing at a temperature between 800 and 1200 C. 
     
     
         4 . The process of  claim 2  wherein the step of brazing said new ceramic top layer to said first new top surface of said substrate support pedestal comprises brazing at a temperature between 770 and 1200 C. 
     
     
         5 . The process of  claim 1  wherein the step of brazing said new ceramic top layer to said first new top surface of said substrate support pedestal comprises brazing at a temperature between 770 and 1200 C. 
     
     
         6 . The process of  claim 1  further comprising the step of machining down the top surface of said new top ceramic layer after the step of brazing said new top ceramic layer to said first new top surface of said substrate support pedestal. 
     
     
         7 . The process of  claim 4  further comprising the step of machining down the top surface of said new top ceramic layer after the step of brazing said new top ceramic layer to said first new top surface of said substrate support pedestal. 
     
     
         8 . The process of  claim 1  wherein the step of brazing further comprises placing the pedestal assembly into a vacuum oven with a pressure below 1×10E-4 torr. 
     
     
         9 . The process of  claim 4  wherein the step of brazing further comprises placing the pedestal assembly into a vacuum oven with a pressure below 1×10E-4 torr. 
     
     
         10 . The process of  claim 1  wherein said new ceramic top layer comprises aluminum nitride. 
     
     
         11 . The process of  claim 9  wherein said new ceramic top layer comprises aluminum nitride. 
     
     
         12 . A process for the repair of a substrate support pedestal, said process comprising the steps of:
 machining down a top surface of a substrate support pedestal to create a first new top surface, said substrate support pedestal comprising aluminum nitride;   placing a braze layer in between said first new top surface of said substrate support pedestal and a new top ceramic layer, said braze layer comprising metallic aluminum; and   brazing said new top ceramic layer to said first new top surface of said substrate support pedestal, thereby creating a hermetic joint between said new top ceramic layer to said first new top surface of said substrate support pedestal, wherein the step of machining down a top surface of a substrate support pedestal to create a first new top surface comprises machining through and removing a clamping electrode.   
     
     
         13 . The process of  claim 12  wherein said braze layer comprises metallic aluminum of greater than 99% by weight. 
     
     
         14 . The process of  claim 12  wherein the step of brazing said new ceramic top layer to said first new top surface of said substrate support pedestal comprises brazing at a temperature between 800 and 1200 C. 
     
     
         15 . The process of  claim 13  wherein the step of brazing said new ceramic top layer to said first new top surface of said substrate support pedestal comprises brazing at a temperature between 770 and 1200 C. 
     
     
         16 . The process of  claim 12  wherein the step of brazing said new ceramic top layer to said first new top surface of said substrate support pedestal comprises brazing at a temperature between 770 and 1200 C. 
     
     
         17 . The process of  claim 12  further comprising the step of machining down the top surface of said new top ceramic layer after the step of brazing said new top ceramic layer to said first new top surface of said substrate support pedestal. 
     
     
         18 . The process of  claim 15  further comprising the step of machining down the top surface of said new top ceramic layer after the step of brazing said new top ceramic layer to said first new top surface of said substrate support pedestal. 
     
     
         19 . The process of  claim 12  wherein the step of brazing further comprises placing the pedestal assembly into a vacuum oven with a pressure below 1×10E-4 torr. 
     
     
         20 . The process of  claim 15  wherein the step of brazing further comprises placing the pedestal assembly into a vacuum oven with a pressure below 1×10E-4 torr. 
     
     
         21 . The process of  claim 12  wherein said new ceramic top layer comprises aluminum nitride. 
     
     
         22 . The process of  claim 20  wherein said new ceramic top layer comprises aluminum nitride.