Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME

Abstract

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

What is claimed is: 
     
         1 . A silicon- and nitrogen-containing film formation process, the process comprising the steps of:
 depositing a silicon- and nitrogen-containing film on a substrate by introducing a vapor of a mono-substituted TSA precursor and a nitrogen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2 ] and each R is independently selected from the group consisting of H; a C 1 -C 6  hydrocarbyl group; or a silyl group [SiR′ 3 ] with each R′ being independently selected from H or a C 1 -C 6  hydrocarbyl group.   
     
     
         2 . The silicon- and nitrogen-containing film formation process of  claim 1 , wherein X is Cl, Br, or I. 
     
     
         3 . The silicon- and nitrogen-containing film formation process of  claim 2 , wherein X is Cl. 
     
     
         4 . The silicon- and nitrogen-containing film formation process of  claim 1 , wherein X is NiPr 2 . 
     
     
         5 . The silicon- and nitrogen-containing film formation process of  claim 1 , wherein X is NEt 2 . 
     
     
         6 . The silicon- and nitrogen-containing film formation process of  claim 1 , wherein X is N(SiH 3 ) 2 . 
     
     
         7 . The silicon- and nitrogen-containing film formation process of  claim 1 , wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N 2 , N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof. 
     
     
         8 . The silicon- and nitrogen-containing film formation process of  claim 7 , wherein the nitrogen-containing reactant is NH 3 . 
     
     
         9 . The silicon- and nitrogen-containing film formation process of  claim 8 , wherein the mono-substituted TSA precursor and the nitrogen-containing reactant are introduced into the reactor simultaneously. 
     
     
         10 . The silicon- and nitrogen-containing film formation process of  claim 7 , wherein the nitrogen-containing reactant is plasma N 2 . 
     
     
         11 . The silicon- and nitrogen-containing film formation process of  claim 10 , wherein the mono-substituted TSA precursor and the nitrogen-containing reactant are introduced into the reactor sequentially. 
     
     
         12 . An ALD silicon nitride film formation process, the process comprising the steps of:
 depositing on a substrate a silicon nitride film having an etch rate from 0.1% w/w HF normalized to thermally grown silicon dioxide in a range from approximately 0.7 to approximately 3.5 by sequentially introducing a vapor of a mono-substituted TSA precursor and a nitrogen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2 ] and each R is independently selected from the group consisting of H or a C 1 -C 6  hydrocarbyl group.   
     
     
         13 . The ALD silicon nitride film formation process of  claim 12 , wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N 2 , N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof. 
     
     
         14 . The ALD silicon nitride film formation process of  claim 13 , wherein the nitrogen-containing reactant is plasma N 2 . 
     
     
         15 . The ALD silicon oxide film formation process of  claim 12 , wherein X is Cl, Br, or I. 
     
     
         16 . The ALD silicon oxide film formation process of  claim 13 , wherein X is Cl, Br, or I. 
     
     
         17 . The ALD silicon oxide film formation process of  claim 14 , wherein X is Cl, Br, or I. 
     
     
         18 . The ALD silicon oxide film formation process of  claim 12 , wherein X is Cl. 
     
     
         19 . The ALD silicon oxide film formation process of  claim 13 , wherein X is Cl. 
     
     
         20 . The ALD silicon oxide film formation process of  claim 14 , wherein X is Cl.