Optoelectronic foil and manufacturing method of optoelectronic foil

Abstract

An optoelectronic foil comprising a substrate and a conductive layer comprising at least one oxide layer and at least one metal layer, wherein between the conductive layer and the substrate of the foil there is a barrier layer comprising at least one material selected from the group consisting of silicon oxides (SiOx), aluminium oxides (Al2O3, AlOxNy), titanium oxides (TiOx), silicon oxynitrides SiON, silicon nitrides (Si3N4, SiNx), organic silicon compounds (SiCxHy), zirconium oxide (ZrO2), hafnium oxide (HfO2), chromium oxides (CrO, Cr2O3, CrO2, CrO3, CrO5) and parylene.

What is claimed is: 
     
         1 . An optoelectronic foil comprising a substrate and a conductive layer comprising at least one metal layer, wherein:
 between the conductive layer and the substrate, the foil comprises a barrier layer comprising at least one material selected from the group consisting of silicon oxides (SiO x ), aluminium oxides (Al 2 O 3 , AlO x N y ), titanium oxides (TiO x ), silicon oxynitrides SiON, silicon nitrides (Si 3 N 4 , SiN g ), organic silicon compounds (SiC x H y ), zirconium oxide (Zr02), hafnium oxide (HfO 2 ), chromium oxides (CrO, Cr 2 O 3 , CrO 2 , CrO 3 , CrO 5 ) and parylene,   wherein the conductive layer further comprises at least two adjacent oxide layers, with the metal layer being a single layer of metal arranged between two adjacent oxide layers of the at least two adjacent oxide layers,   
       wherein each oxide layer of the at least two adjacent oxide layers is made of at least one oxide selected from the group consisting of: ZnO, AZO (aluminium zinc oxide), SnO 2 , IZO (indium zinc oxide), FTO (fluorine tin oxide), ZTO (tin zinc oxide), ITO (tin indium oxide), GZO (zinc gallium oxide), GIO (indium gallium oxide), In 2 O 3 , Sb:SnO 2 , IO:H (hydrogen indium oxide), CdO, Zn 2 SnO 4 , ZnSnO 3 , Zn 2 In2O 5 , NiO x , NiO x :Li, TiOx, ZnS, ZnSe, Te 2 O 3 , MoO x , V 2 O 5  and WO 3 , 
       and wherein at least one of the oxide layers of the at least two adjacent oxide layers is:
 either a monolayer structure 
 or a multi-layer structure consisting of at least two sublayers stacked one on the other within the oxide layer and wherein one of the sublayers is made of a different material than another sublayer. 
 
     
     
         2 . The optoelectronic foil according to  claim 1 , wherein the barrier layer is a monolayer structure. 
     
     
         3 . The optoelectronic foil according to  claim 1 , wherein the barrier layer is a multi-layer structure consisting of at least two sublayers stacked one on the other within the barrier layer and wherein one of the sublayers is made of a different material than another sublayer. 
     
     
         4 . The optoelectronic foil according to  claim 1 , wherein the substrate is made of at least one plastic selected from the group consisting of: polyethylene terephthalate (PET), polyethylene naphthalene (PEN), polyethylene (PE), polypropylene (PP), polyethersulfone (PES), polyimide (PI), polystyrene (PS), ethylene/tetrafluoroethylene (ETFE) and parylene. 
     
     
         5 . The optoelectronic foil according to  claim 4 , wherein the substrate is doped with inorganic nanocomposites. 
     
     
         6 . The optoelectronic foil according to  claim 1 , wherein the metal layer is made of a material selected from the group consisting of: Al, Ti, Ni, Cr, Au, Mg, Ta, Ge, Ag, Cu, Zr, Pt and W. 
     
     
         7 . The optoelectronic foil according to  claim 1 , wherein the conductive layer, comprises n oxide layers and n−1 metal layers arranged alternately between adjacent oxide layers. 
     
     
         8 . A method for manufacturing an optoelectronic foil comprising:
 cleaning and activating a selected surface of the substrate onto which a barrier layer is to be deposited,   forming the barrier layer on said cleaned and activated substrate,   
       and, after forming the barrier layer, forming a conductive layer comprises depositing at least one metal layer
 wherein forming the barrier layer comprises depositing of at least one material selected from the group consisting of silicon oxides (SiO x ), aluminium oxides (Al 2 O 3 , AlO x N y ), titanium oxides (TiO x ), silicon oxynitrides SiON, silicon nitrides (Si 3 N 4 , SiN x ), organic silicon compounds (SiC x H y ), zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ), chromium oxides (CrO, Cr 2 O 3 , CrO 2 , CrO 3 , CrO 5 ) and parylene, 
 wherein forming the conductive layer further comprises depositing of at least two adjacent metal oxide layers each comprising at least one oxide selected from the group consisting of: ZnO, AZO (aluminum zinc oxide), SnO 2 , IZO (indium zinc oxide), FTO (fluorine tin oxide), ZTO (tin zinc oxide), ITO (tin indium oxide), GZO (zinc gallium oxide), GIO (indium gallium oxide), In 2 O 3 , Sb:SnO 2 , IO:H (hydrogen indium oxide), CdO, Zn 2 SnO 4 , ZnSnO 3 , Zn 2 In 2 O 5 , NiO x , NiO x :Li, TiO x , ZnS, ZnSe, Te 2 O 3 , MoO x , V 2 O 5  and WO 3 , and wherein depositing the metal layer comprises depositing a single layer of metal selected from the group consisting of: Al, Ti, Ni, Cr, Au, Mg, Ta, Ge, Ag, Cu, Zr, Pt and W, 
 
       wherein forming the conductive layer comprises forming on the barrier layer consecutively: a first oxide layer, a metal layer and a second oxide layer. 
     
     
         9 . The method according to  claim 8 , wherein the barrier layer is formed by depositing one layer of material onto the substrate to form a barrier layer having a monolayer structure. 
     
     
         10 . The method according to  claim 8 , wherein the barrier layer is formed by depositing at least two sublayers of different material onto the substrate to form the barrier layer having a multi-layer structure. 
     
     
         11 . The method according to  claim 8 , wherein the conductive layer is formed so that on the barrier layer there are individually formed one on another, with an alternating arrangement of oxide layers and metal layers, n oxide layers and n−1 metal layers, wherein n is a natural number. 
     
     
         12 . The method according to  claim 8 , wherein at least one oxide layer of the at least two adjacent metal oxide layers is formed by depositing one layer of oxide material to form an oxide layer having a monolayer structure. 
     
     
         13 . The method according to  claim 8 , wherein at least one oxide layer of the at least two adjacent metal oxide layers is formed by depositing at least two oxide sublayers of different material to form an oxide layer having a multi-layer structure. 
     
     
         14 . The method according to  claim 8 , wherein the substrate is cleaned and activated using at least one technique selected from the group consisting of: plasma treatment, corona discharge treatment, carbon dioxide treatment, ultraviolet radiation and ozone treatment, and cleaning with solvents selected from the group consisting of acetone, isopropanol, water, mixture of acetone and water and mixture of isopropanol and water. 
     
     
         15 . The method according to  claim 8 , wherein the barrier layer and the conductive layer are independently deposited onto the substrate using at least one technique selected from the group consisting of atomic layer deposition (ALD), magnetron sputtering, electron-beam sputtering technique and thermal evaporation technique.