Thermoelectric module

Abstract

A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

1 . A thermoelectric module comprising:
 A) at least a first and a second thermoelectric element, the first and second thermoelectric element comprising a thermoelectric semiconductor;   B) an electrode connecting the first and second thermoelectric elements;   C) at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode and the second joining layer positioned between the second thermoelectric element and the electrode; and   D) at least a first and a second anti-oxidation layer, the first anti-oxidation layer positioned between the first thermoelectric element and the first joining layer, and the second anti-oxidation layer positioned between the second thermoelectric element and the second joining layer,   wherein the first and second anti-oxidation layer independently comprise one or more selected from the group consisting of the following i) to iv):   i) an alloy comprising molybdenum; and one or more metal selected from the group consisting of tungsten, cobalt, titanium, zirconium, and tantalum,   ii) an oxide of the alloy of i),   iii) a nitride of the alloy of i), and   iv) an oxynitride of the alloy of i).   
     
     
         2 . The thermoelectric module according to  claim 1 , wherein a thickness of the first and second anti-oxidation layers is 0.1 to 200 μm. 
     
     
         3 . The thermoelectric module according to  claim 1 , wherein the first and second anti-oxidation layer independently comprise at least one alloy of i) selected from the group consisting of:
 an alloy comprising molybdenum and titanium,   an alloy comprising molybdenum and tungsten,   an alloy comprising molybdenum and zirconium,   an alloy comprising molybdenum and tantalum,   an alloy comprising molybdenum, titanium and tantalum,   an alloy comprising molybdenum, titanium and cobalt, and   an alloy comprising molybdenum, cobalt and tungsten.   
     
     
         4 . The thermoelectric module according to  claim 3 , wherein the first and second anti-oxidation layers comprise an alloy comprising molybdenum and titanium. 
     
     
         5 . The thermoelectric module according to  claim 4 , wherein the alloy comprises molybdenum and titanium at an atomic ratio of 1:9 to 9:1. 
     
     
         6 . The thermoelectric module according to  claim 1 , wherein the first and second anti-oxidation layer independently comprise a nitride of an alloy comprising molybdenum and titanium (MoTiN), or an oxynitride of an alloy comprising molybdenum and titanium (MoTiON). 
     
     
         7 . The thermoelectric module according to  claim 1 , wherein the first and second anti-oxidation layer are each a sputtered layer, a vapor-deposited layer, an ion-plated layer, an electroplated layer, or a sintered layer. 
     
     
         8 . The thermoelectric module according to  claim 1 , wherein the first and second anti-oxidation layer are each formed by direct contact to ato the first and second thermoelectric element, respectively. 
     
     
         9 . The thermoelectric module according to  claim 1 , wherein the first and second joining layer are each a soldered metal layer or sintered metal layer. 
     
     
         10 . The thermoelectric module according to  claim 9 , wherein the first and second joining layer are each the sintered metal layer, which comprises one or more first metal selected from the group consisting of nickel (Ni), copper (Cu), iron (Fe), and silver (Ag); and one or more second metal selected from the group consisting of tin (Sn), zinc (Zn), bismuth (Bi) and indium (In). 
     
     
         11 . The thermoelectric module according to  claim 1 , wherein the thermoelectric semiconductor comprises a Co—Sb-based thermoelectric semiconductor, or a Bi—Te-based thermoelectric semiconductor.