Solar cell with reduced surface recombination

Abstract

A solar cell is provided. The solar cell includes a p-n junction and a coating. The p-n junction includes upper and lower layers. The coating overlies the upper layer of the p-n junction. The coating includes a transparent conductive layer and a gate dielectric layer, which is interposed between the transparent conductive layer and the upper layer of the p-n junction. The solar cell further includes a front-contact and a back-contact, which are electrically communicative with each other. The front-contact is electrically communicative with the upper layer of the p-n junction through the coating. The back-contact is electrically communicative with the lower layer of the p-n junction. The solar cell can also include a contact via electrically communicative with the back-contact and with the transparent conductive layer.

1 . A solar cell, comprising:
 a p-n junction comprising upper and lower layers;   a coating overlying the upper layer of the p-n junction and comprising a transparent conductive layer and a gate dielectric layer interposed between the transparent conductive layer and the upper layer of the p-n junction;   a front-contact and a back-contact, which are electrically communicative with each other and with the upper layer of the p-n junction through the coating and with the lower layer of the p-n junction, respectively; and   a contact via, which is electrically communicative with the back-contact and with the transparent conductive layer.   
     
     
         2 . The solar cell according to  claim 1 , wherein an interface between the upper layer of the p-n junction and the gate dielectric layer forms an electron accumulation layer from electrical communication between the back-contact and the contact via. 
     
     
         3 . The solar cell according to  claim 1 , wherein:
 the lower layer of the p-n junction comprises a first dopant type semiconductor; and   the upper layer of the p-n junction comprises the first dopant type semiconductor with a second dopant diffused therein.   
     
     
         4 . The solar cell according to  claim 3 , wherein the first dopant type semiconductor material comprises a p-type silicon (Si). 
     
     
         5 . The solar cell according to  claim 3 , wherein the second dopant comprises an n-type dopant. 
     
     
         6 . The solar cell according to  claim 1 , wherein the transparent conductive layer comprises transparent conductive oxide (TCO). 
     
     
         7 . The solar cell according to  claim 1 , wherein the coating further comprises an anti-reflective layer overlying the transparent conductive layer. 
     
     
         8 . The solar cell according to  claim 1  further comprising a load electrically interposed between the front-contact and the back-contact. 
     
     
         9 . A solar cell comprising:
 a first layer with a first dopant type semiconductor;   a second layer overlying the first layer with the first dopant type semiconductor and a second dopant diffused therein;   a coating overlying the second layer and comprising a transparent conductive layer and a gate dielectric layer interposed between the transparent conductive layer and the second layer;   circuitry comprising:
 a front-contact, which is electrically communicative with the second layer through the coating and which is insulated from the coating by spacers; 
 a back-contact, which is electrically communicative with the first layer; 
 a coupling by which the front- and back-contacts are electrically communicative; 
 a contact via, which is electrically communicative with the transparent conductive layer; and 
 an additional coupling by which the contact via and the back-contacts are electrically communicative. 
   
     
     
         10 . The solar cell according to  claim 9 , wherein an interface between the second layer and the gate dielectric layer forms an electron accumulation layer from electrical communication between the back-contact and the contact via. 
     
     
         11 . The solar cell according to  claim 9 , wherein the first dopant type semiconductor comprises a p-type silicon (Si). 
     
     
         12 . The solar cell according to  claim 9 , wherein the second dopant comprises an n-type dopant. 
     
     
         13 . The solar cell according to  claim 9 , wherein the transparent conductive layer comprises transparent conductive oxide (TCO). 
     
     
         14 . The solar cell according to  claim 9 , wherein the coating further comprises an anti-reflective layer overlying the transparent conductive layer. 
     
     
         15 . The solar cell according to  claim 9  further comprising a load electrically interposed between the front-contact and the back-contact. 
     
     
         16 - 20 . (canceled) 
     
     
         21 . The solar cell according to  claim 9 , wherein the spacers extend along an entirety of the front-contact through the coating and into the second layer.