Iii-v-segmented finfet free of wafer bonding

Abstract

A technique relates to a semiconductor device. A stack is formed of alternating layers of inserted layers and channel layers on a substrate. Source or drain (S/D) regions are formed on opposite sides of the stack. The inserted layers are converted into oxide layers. Gate materials are formed on the stack.

1 . A method of forming a semiconductor device, the method comprising:
 forming a stack of alternating layers of inserted layers and channel layers on a substrate;   forming source or drain (S/D) regions on opposite sides of the stack;   converting the inserted layers into oxide layers; and   forming gate materials on the stack.   
     
     
         2 . The method of  claim 1 , wherein converting the inserted layers into the oxide layers causes the oxide layers to shrink. 
     
     
         3 . The method of  claim 1 , wherein converting the inserted layers into the oxide layers causes an indent in the oxide layers. 
     
     
         4 . The method of  claim 1 , wherein the oxide layers separate the channel layers in the stack. 
     
     
         5 . The method of  claim 1 , wherein the oxide layers are non-conductive. 
     
     
         6 . The method of  claim 1 , wherein the channel layers are conductive. 
     
     
         7 . The method of  claim 1 , wherein the inserted layers comprise AlGaAs. 
     
     
         8 . The method of  claim 1 , wherein the oxide layers comprise AlGaO. 
     
     
         9 . The method of  claim 1  further comprising forming a buffer layer on the substrate prior to forming the stack. 
     
     
         10 . The method of  claim 9 , wherein the buffer layer comprises GaPAs. 
     
     
         11 - 20 . (canceled)