Light source module, display panel, display apparatus and methods for manufacturing the same

Abstract

A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.

1 - 69 . (canceled) 
     
     
         70 . A semiconductor device, comprising:
 a first pixel comprising a red sub-pixel configured to emit first light having a primary peak intensity of red light having a wavelength within a first peak range of 630 to 780 nm, a green sub-pixel configured to emit second light having a primary peak intensity of green light having a wavelength within a second peak range of 500 to 600 nm, and a blue sub-pixel configured to emit third light having a primary peak intensity of blue light having a wavelength within a third peak range of 420 to 480 nm, the red sub-pixel, the green sub-pixel and blue sub-pixel being located adjacent to each other, the red sub-pixel, the green sub-pixel and the blue sub-pixel each comprising a light emitting diode and a transmissive material positioned to receive light from the corresponding light emitting diode,   wherein a first sub-pixel is one of the red sub-pixel, the green sub-pixel and the blue sub-pixel, and second sub-pixels are others of the red sub-pixel, the green sub-pixel and the blue sub-pixel that are not the first sub-pixel,   wherein the first sub-pixel comprises a tuning wavelength converting material embedded in the transmissive material of the first sub-pixel, the tuning wavelength converting material having a material property to absorb light emitted by the light emitting diode of the first sub-pixel and emit light that does not have a wavelength of the absorbed light, causing the light emitted by the first sub-pixel to have a secondary peak intensity having a wavelength within the peak range of one of the second sub-pixels,   wherein the light emitted by the first sub-pixel is a spectrum of light having an intensity that varies with respect to wavelength, including the primary peak intensity and the secondary peak intensity of the light emitted by the first sub-pixel,   wherein an integral of a first graph of the intensity of the light emitted by the first sub-pixel with respect to wavelength between first and second valleys of the first graph on either side of and adjacent to the primary peak intensity equals S 1 ,   wherein an integral of the first graph of the intensity of the light emitted by the first sub-pixel with respect to wavelength between third and fourth local valleys of the first graph on either side of and adjacent to the secondary peak intensity equals S 2 ,   wherein S 2  is less than or equal to 20.3% of S 1 , and   wherein the each of the first, second, third and fourth valleys of the first graph of the intensity of the light emitted by the first sub-pixel comprises one of a local minimum of the first graph of the intensity of the third light and a zero value of the first graph of the intensity of the third light.   
     
     
         71 . The semiconductor device of  claim 70 , wherein the first sub-pixel is the blue sub-pixel and the secondary peak intensity has a wavelength within the peak range of the green sub-pixel. 
     
     
         72 . The semiconductor device of  claim 71 , wherein S 2  is less than or equal to 12.7% of S 1 . 
     
     
         73 . The semiconductor device of  claim 71 , wherein the second valley and the third valley are the same valley. 
     
     
         74 . The semiconductor device of  claim 70 ,
 wherein the first sub-pixel is the blue sub-pixel and the secondary peak intensity of the light emitted by the first sub-pixel has a wavelength less than 550 nm.   
     
     
         75 . The semiconductor device of  claim 74 , wherein the z coordinate of the third light in the CIE 1931 XYZ color space chromaticity diagram is 0.62 or greater. 
     
     
         76 . The semiconductor device of  claim 71 ,
 wherein the primary peak intensity of the red light of the first light has a wavelength of 630 to 780 nm,   wherein the primary peak intensity of the green light of the second light has a wavelength of 525 to 580 nm, and   wherein the primary peak intensity of the blue light of the third light has a wavelength of 440 to 460 nm.   
     
     
         77 . The semiconductor device of  claim 76 , wherein a difference in the wavelengths of the primary peak intensity of light emitted by the green sub-pixel and the secondary peak intensity of the light emitted by the first sub-pixel is less than 20 nm. 
     
     
         78 . The semiconductor device of  claim 76 , wherein a difference in the wavelengths of the primary peak intensity of light emitted by the green sub-pixel and the secondary peak intensity of the light emitted by the first sub-pixel is less than 10 nm. 
     
     
         79 . The semiconductor device of  claim 70 , wherein the one of the second sub-pixels comprises a second wavelength converting material embedded in the transmissive material of the one of the second sub-pixels. 
     
     
         80 . The semiconductor device of  claim 79 , wherein the tuning wavelength converting material and the second wavelength converting material are the same wavelength converting material. 
     
     
         81 . The semiconductor device of  claim 79 , wherein tuning wavelength converting material and the second wavelength converting material comprise a nitride phosphor. 
     
     
         82 . The semiconductor device of  claim 81 , wherein tuning wavelength converting material and the second wavelength converting material comprise one or more of the following:
 β-SiAlON:Eu, La3Si6N11:Ce, α-SiAlON:Eu, CaAlSiN3:Eu, Sr2Si5N8:Eu, SrSiAl4N7:Eu, and SrLiAl3N4:Eu, Ln4-x(EuzM1-z)xSi12-yAlyO3+x+yN18-x-y (0.5≤x≤3, 0<z<0.3, and 0<y≤4).   
     
     
         83 . The semiconductor device of  claim 70 , wherein the red sub-pixel, the green sub-pixel and the blue sub-pixel are all formed on the same semiconductor chip emitting light having a wavelength of 440 to 460 nm. 
     
     
         84 . The semiconductor device of  claim 70 , wherein at least one of the first wavelength converting material, the second wavelength converting material and the third wavelength converting material includes at least one of phosphor and quantum dot. 
     
     
         85 . A semiconductor device, comprising:
 a first pixel comprising a red sub-pixel configured to emit first light having a primary peak intensity of red light having a wavelength within a first peak range of 630 to 780 nm, a green sub-pixel configured to emit second light having a primary peak intensity of green light having a wavelength within a second peak range of 500 to 600 nm, and a blue sub-pixel configured to emit third light having a primary peak intensity of blue light having a wavelength within a third peak range of 420 to 480 nm, the red sub-pixel, the green sub-pixel and blue sub-pixel being located adjacent to each other, the red sub-pixel, the green sub-pixel and the blue sub-pixel each comprising a light emitting diode and a transmissive material positioned to receive light from the corresponding light emitting diode,   wherein a first sub-pixel is one of the red sub-pixel, the green sub-pixel and the blue sub-pixel, and second sub-pixels are others of the red sub-pixel, the green sub-pixel and the blue sub-pixel that are not the first sub-pixel,   wherein the first sub-pixel comprises a tuning wavelength converting material embedded in the transmissive material of the first sub-pixel, the tuning wavelength converting material having a material property to absorb light emitted by the light emitting diode of the first sub-pixel and emit light that does not have a wavelength of the absorbed light, causing the light emitted by the first sub-pixel to have a secondary peak intensity having a wavelength within the peak range of one of the second sub-pixels.   
     
     
         86 . The semiconductor device of  claim 85 ,
 wherein each of the red sub-pixel, the green sub-pixel and the blue sub-pixel comprise a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer and an active layer interposed between the first conductivity-type semiconductor layer and second conductivity-type semiconductor layer, and   wherein the semiconductor device comprises a wiring electrically connecting the second conductivity-type semiconductor layer of the red sub-pixel, the green sub-pixel and the blue sub-pixel in common.   
     
     
         87 . The semiconductor device of  claim 86 , further comprising first, second and third electrode pads each electrically connected to a respective one of the first conductivity-type semiconductor layer of the red sub-pixel, the green sub-pixel and the blue sub-pixel, the first, second and third electrode pads not being electrically connected to one another. 
     
     
         88 . The semiconductor device of  claim 85 , wherein the red sub-pixel comprises a first transmissive filter layer to selectively block blue light and transmit the first light. 
     
     
         89 . The semiconductor device of  claim 88 ,
 wherein the green sub-pixel comprises a second transmissive filter to selectively block blue light and transmit the second light, and   wherein the blue sub-pixel does not comprise a transmissive filter.