Method for manufacturing oxide semiconductor device

Abstract

In a manufacturing step of an oxide semiconductor device having an active layer of an oxide semiconductor, the step is simplified, thereby improving the productivity. A method for manufacturing an oxide semiconductor device having an active layer of an oxide semiconductor layer of indium (In), gallium (Ga), and zinc (Zn) includes a laser annealing treatment including irradiating an active layer formed region with a laser beam and imparting an etching resistance to the active layer.

1 . A method for manufacturing an oxide semiconductor device having an active layer of an oxide semiconductor layer of indium (In), gallium (Ga), and zinc (Zn),
 the method comprising a laser annealing treatment including irradiating the active layer formed region with a laser beam and imparting an etching resistance to the active layer.   
     
     
         2 . The method for manufacturing an oxide semiconductor device according to  claim 1 ,
 wherein the laser annealing treatment is performed after forming the oxide semiconductor layer, and   a photolithography step is omitted, and a laser beam-unirradiated portion of the oxide semiconductor layer is removed by etching.   
     
     
         3 . The method for manufacturing an oxide semiconductor device according to  claim 1 ,
 wherein a metal layer is directly formed on the patterned active layer to form an electrode pattern.   
     
     
         4 . The method for manufacturing an oxide semiconductor device according to  claim 2 ,
 wherein a metal layer is directly formed on the patterned active layer to form an electrode pattern.   
     
     
         5 . An oxide semiconductor device having an active layer of an oxide semiconductor layer composed of indium (In), gallium (Ga), and zinc (Zn),
 wherein the active layer formed region is imparted an etching resistance by a laser annealing treatment.