Plasma processing apparatus and member of plasma processing chamber

Abstract

A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.

What is claimed is: 
     
         1 . A plasma processing apparatus comprising:
 a processing chamber disposed inside a vacuum container and in which plasma is formed; and   a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride,   wherein a ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to entirety is 60% or more.   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein
 a size of the crystal is 50 nm or smaller.   
     
     
         3 . A method of manufacturing a plasma processing apparatus, which comprises: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride, the method comprising:
 spraying particles of the yttrium fluoride or the material containing the yttrium fluoride using atmospheric plasma while maintaining a surface of the coating film at 280° C. or higher to form the coating film.   
     
     
         4 . The method of manufacturing the plasma processing apparatus according to  claim 3 , wherein
 the particles of the yttrium fluoride or the material containing the yttrium fluoride are sprayed using atmospheric plasma while maintaining a surface of the coating film at 350° C. or lower to form the coating film.   
     
     
         5 . A member of a plasma processing chamber, which comprises a processing chamber disposed inside a vacuum container and in which plasma is formed, forming an inner wall surface of the processing chamber of the plasma processing apparatus in which a sample disposed inside the processing chamber is processed using plasma generated inside the processing chamber, the member comprising
 a coating film disposed on a surface to be exposed to the plasma,   wherein the coating film is formed by spraying of yttrium fluoride or a material containing the yttrium fluoride such that a ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to entirety is 60% or more.   
     
     
         6 . The member of the plasma processing chamber according to  claim 5 , wherein
 a size of the crystal is 50 nm or smaller.   
     
     
         7 . A method of manufacturing a member of a plasma processing chamber, the member forming an inner wall surface of a processing chamber disposed inside a vacuum container and in which plasma is formed, disposed to a surface to be exposed to the plasma, and having a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride, the method comprising:
 spraying particles of the yttrium fluoride or the material containing the yttrium fluoride using atmospheric plasma while maintaining a surface of the coating film at 280° C. or higher to form the coating film.   
     
     
         8 . The method of manufacturing the member of a plasma processing chamber according to  claim 7 , wherein
 the particles of the yttrium fluoride or the material containing the yttrium fluoride are sprayed using atmospheric plasma while maintaining a surface of the coating film at 350° C. or lower to form the coating film.