Etching solution composition

Abstract

An etching solution composition of this disclosure contains hydrogen peroxide, an etching inhibitor, a chelating agent, an etching additive, fluorides, a stabilizer, and water. Etching uniformity is increased by adjusting a mass proportion of each component in the etching solution composition, so as to avoid loss of properties such as etching tapered angles, etching deviation, and etching straightness, thereby enhancing product quality.

What is claimed is: 
     
         1 . An etching solution composition, comprising: hydrogen peroxide, an etching inhibitor, a chelating agent, an etching additive, fluorides, a stabilizer, and water;
 wherein, in the etching solution composition, a mass proportion of the hydrogen peroxide is 4% to 25%, a mass proportion of the etching inhibitor is 6% to 10%, a mass proportion of the chelating agent is 0.01% to 20%, a mass proportion of the etching additive is 0.01% to 20%, a mass proportion of the fluorides is 0.01% to 20%, a mass proportion of the stabilizer is 0.01% to 5%, and a mass proportion of water is to allow a total mass proportion of the etching solution composition to be 100%;   wherein the etching inhibitor is one or more of a heterocyclic aromatic compound, a heterocyclic aliphatic compound, an aromatic polyol, an ammonia monohydrate, quinoline, and a linear polyol; and the stabilizer is one or more of ethylene glycol, propylene glycol, polyethylene glycol, polypropylene glycol, ethanol, and isopropanol.   
     
     
         2 . The etching solution composition according to  claim 1 , wherein the mass proportion of the chelating agent in the etching solution composition is 6% to 20%. 
     
     
         3 . The etching solution composition according to  claim 1 , wherein the mass proportion of the etching additive in the etching solution composition is 6% to 20%. 
     
     
         4 . The etching solution composition according to  claim 1 , wherein the mass proportion of the fluorides in the etching solution composition is 6% to 20%. 
     
     
         5 . The etching solution composition according to  claim 1 , wherein the mass proportion of the stabilizer in the etching solution composition is 3% to 50%. 
     
     
         6 . The etching solution composition according to  claim 1 , wherein the etching additive is one or more of an organic acid, an inorganic acid, an organic acid salt, and an inorganic acid salt. 
     
     
         7 . The etching solution composition according to  claim 1 , wherein the chelating agent is one or more of iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetraacetic acid, diethylene triamine pentaacetic acid, methylene phosphate, aetidronic acid, ethylenediamine tetraacetic acid, diethylenetriamine, sarcosine, alanine, aminobutyric acid, glutamate, glycine, 1-diphosphonic acid, an organic polyphosphonic acid, and ethylenediamine tetraacetic acid. 
     
     
         8 . The etching solution composition according to  claim 1 , wherein the fluorides are compounds which dissociate fluoride ions. 
     
     
         9 . An etching solution composition, comprising: hydrogen peroxide, an etching inhibitor, a chelating agent, an etching additive, fluorides, a stabilizer, and water;
 wherein, in the etching solution composition, a mass proportion of the hydrogen peroxide is 4% to 25%, a mass proportion of the etching inhibitor is 6% to 10%, a mass proportion of the chelating agent is 0.01% to 20%, a mass proportion of the etching additive is 0.01% to 20%, a mass proportion of the fluorides is 0.01% to 20%, a mass proportion of the stabilizer is 0.01% to 5%, and a mass proportion of water is to allow a total mass proportion of the etching solution composition to be 100%.   
     
     
         10 . The etching solution composition according to  claim 9 , wherein the mass proportion of the chelating agent in the etching solution composition is 6% to 20%. 
     
     
         11 . The etching solution composition according to  claim 9 , wherein the mass proportion of the etching additive in the etching solution composition is 6% to 20%. 
     
     
         12 . The etching solution composition according to  claim 9 , wherein the mass proportion of the fluorides in the etching solution composition is 6% to 20%. 
     
     
         13 . The etching solution composition according to  claim 9 , wherein the mass proportion of the stabilizer in the etching solution composition is 3% to 50%. 
     
     
         14 . The etching solution composition according to  claim 9 , wherein the etching inhibitor is one or more of a heterocyclic aromatic compound, a heterocyclic aliphatic compound, an aromatic polyol, an ammonia monohydrate, quinoline, and a linear polyol. 
     
     
         15 . The etching solution composition according to  claim 9 , wherein the etching additive is an organic acid, and inorganic acid, and organic acid salt, and an inorganic acid salt. 
     
     
         16 . The etching solution composition according to  claim 9 , wherein the chelating agent is one or more of iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetraacetic acid, diethylene triamine pentaacetic acid, methylene phosphate, etidronic acid, ethylenediamine tetraacetic acid, diethylenetriamine, sarcosine, alanine, aminobutyric acid, glutamate, glycine, 1-diphosphonic acid, an organic polyphosphonic acid, and ethylenediamine tetraacetic acid. 
     
     
         17 . The etching solution composition according to  claim 9 , the stabilizer is one or more of ethylene glycol, propylene glycol, polyethylene glycol, polypropylene glycol, ethanol, and isopropanol. 
     
     
         18 . The etching solution composition according to  claim 9 , wherein the fluorides are compounds which dissociate fluoride ions.