Semiconductor Device and Method of Forming Conductive Vias to Have Enhanced Contact to Shielding Layer

Abstract

A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate in an offset pattern. An electrical component is disposed in a die attach area over a first surface of the substrate. The conductive vias are formed around the die attach area of the substrate. A first conductive layer is formed over the first surface of the substrate, and a second conductive layer is formed over the second surface. An encapsulant is deposited over the substrate and electrical component. The substrate is singulated through the conductive vias. A first conductive via has a greater exposed surface area than a second conductive via. A shielding layer is formed over the electrical component and in contact with a side surface of the conductive vias. The shielding layer may extend over a second surface of substrate opposite the first surface of the substrate.

1 . A method of making a semiconductor device, comprising:
 providing a substrate including a first conductive via formed through the substrate and a second conductive via formed through the substrate adjacent to the first conductive via, wherein a centerline of the first conductive via is offset with respect to a centerline of the second conductive via;   disposing an electrical component in a die attach area over a first surface of the substrate;   singulating the substrate through the first conductive via and second conductive via; and   forming a shielding layer over the electrical component and in contact with a side surface of the first conductive via and second conductive via.   
     
     
         2 . The method of  claim 1 , further including depositing an encapsulant over the substrate and electrical component. 
     
     
         3 . A method of making a semiconductor device, comprising:
 providing a substrate including a first conductive via formed through the substrate and a second conductive via formed through the substrate adjacent to the first conductive via, wherein the first conductive via is offset with respect to the second conductive via;   disposing an electrical component in a die attach area over a first surface of the substrate;   singulating the substrate through the first conductive via and second conductive via; and   forming a shielding layer over the electrical component and in contact with a side surface of the first conductive via and second conductive via, wherein the side surface of the first conductive via has a greater exposed surface area than the side surface of the second conductive via.   
     
     
         4 . The method of  claim 1 , wherein the shielding layer extends over a second surface of substrate opposite the first surface of the substrate. 
     
     
         5 . The method of  claim 1 , further including forming a conductive layer over a second surface of substrate opposite the first surface of the substrate, wherein the conductive layer includes a plurality of gaps. 
     
     
         6 . The method of  claim 1 , further including forming a plurality of conductive vias around the die attach area of the substrate. 
     
     
         7 . A method of making a semiconductor device, comprising:
 providing a substrate including a plurality of conductive vias formed through the substrate in an offset pattern along a centerline;   disposing an electrical component in a die attach area over a first surface of the substrate;   singulating the substrate through the conductive vias; and   forming a shielding layer over the electrical component and in contact with a side surface of the conductive vias.   
     
     
         8 . The method of  claim 7 , further including depositing an encapsulant over the substrate and electrical component. 
     
     
         9 . The method of  claim 7 , wherein a first conductive via of the plurality of conductive vias has a greater exposed surface area than a second conductive via of the plurality of conductive vias. 
     
     
         10 . The method of  claim 7 , wherein the shielding layer extends over a second surface of substrate opposite the first surface of the substrate. 
     
     
         11 . The method of  claim 7 , further including forming a conductive layer over a second surface of substrate opposite the first surface of the substrate, wherein the conductive layer includes a plurality of gaps. 
     
     
         12 . The method of  claim 7 , further including forming a conductive layer over the first surface of the substrate. 
     
     
         13 . The method of  claim 7 , further including forming the plurality of conductive vias around the die attach area of the substrate. 
     
     
         14 . A method of making a semiconductor device, comprising:
 providing a substrate including a plurality of conductive vias having a rectangular form extending through the substrate;   disposing an electrical component in a die attach area over a first surface of the substrate;   singulating the substrate through the conductive vias; and   forming a shielding layer over the electrical component and in contact with a side surface of the conductive vias.   
     
     
         15 . The method of  claim 14 , further including depositing an encapsulant over the substrate and electrical component. 
     
     
         16 . The method of  claim 14 , wherein the shielding layer extends over a second surface of substrate opposite the first surface of the substrate. 
     
     
         17 . The method of  claim 14 , further including forming a conductive layer over a second surface of substrate opposite the first surface of the substrate, wherein the conductive layer includes a plurality of gaps. 
     
     
         18 . The method of  claim 14 , further including forming a conductive layer over the first surface of the substrate. 
     
     
         19 . The method of  claim 14 , further including forming the plurality of conductive vias around the die attach area of the substrate. 
     
     
         20 . A semiconductor device, comprising:
 a substrate including a plurality of conductive vias formed through the substrate in an offset pattern along a centerline;   an electrical component disposed in a die attach area over a first surface of the substrate, wherein the substrate is singulated through the conductive vias; and   a shielding layer formed over the electrical component and in contact with a side surface of the conductive vias.   
     
     
         21 . The semiconductor device of  claim 20 , further including an encapsulant deposited over the substrate and electrical component. 
     
     
         22 . The semiconductor device of  claim 20 , wherein a first conductive via of the plurality of conductive vias has a greater exposed surface area than a second conductive via of the plurality of conductive vias. 
     
     
         23 . The semiconductor device of  claim 20 , wherein the shielding layer extends over a second surface of substrate opposite the first surface of the substrate. 
     
     
         24 . The semiconductor device of  claim 20 , further including forming a conductive layer over a second surface of substrate opposite the first surface of the substrate, wherein the conductive layer includes a plurality of gaps. 
     
     
         25 . The semiconductor device of  claim 20 , further including forming the plurality of conductive vias around the die attach area of the substrate.