Light-emitting diode and manufacture method thereof

Abstract

A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

What is claimed is: 
     
         1 . A light-emitting diode (LED), comprising:
 a substrate;   a semiconductor epitaxial layer disposed on the substrate and comprising a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer, wherein the quantum well layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer, a first recessed portion is formed in the semiconductor epitaxial layer, the recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and exposes the first-type doped semiconductor layer to form a first region and a second region on the semiconductor epitaxial layer, and a second recessed portion is formed in the first-type doped semiconductor layer within the first recessed portion to expose a portion of the substrate, wherein the first region contain a portion of the second-type doped semiconductor layer and the exposed portion of the substrate and the second region contain the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer, and the first region and the second region are connected to each other via the first-type doped semiconductor layer;   a first electrode located within the first region and electrically connected to at least a portion of the first-type doped semiconductor layer, wherein the first electrode comprises a soldering portion disposed on a portion of the first-type doped semiconductor layer and contacting the exposed portion of the substrate, and a branch portion extended from the soldering portion disposed on a portion of the first-type doped semiconductor layer and contacting the exposed portion of the substrate; and   a second electrode located in the second region and electrically connected to the second-type doped semiconductor layer.   
     
     
         2 . The LED of  claim 1 , further comprising:
 a current-blocking layer disposed on the second-type doped semiconductor layer in the second region, wherein the current-blocking layer comprises a main body and an extending portion extended from the main body; and   a current-spreading layer disposed on the second-type doped semiconductor layer and the current-blocking layer.   
     
     
         3 . The LED of  claim 2 , wherein the second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer. 
     
     
         4 . The LED of  claim 2 , wherein the current-blocking layer and the current-spreading layer further contain a first opening, and the first opening exposes a portion of the second-type doped semiconductor layer. 
     
     
         5 . The LED of  claim 4 , further comprising an insulation layer covering a portion of the first-type doped semiconductor layer, the quantum well layer, and the second-type doped semiconductor layer. 
     
     
         6 . The LED of  claim 5 , wherein the insulation layer respectively has a second opening, a third opening, and at least one fourth opening, the second opening is located in the second region and is connected to the first opening, the third opening is located in the first region and exposes a portion of the first-type doped semiconductor layer and the exposed portion of the substrate in the first region, and the at least one fourth opening exposing the first-type doped semiconductor is arranged along an extending direction of the branch portion of the first electrode. 
     
     
         7 . The LED of  claim 5 , wherein the second electrode is disposed in the second opening and the first opening, the soldering portion of the first electrode is disposed in the third opening, and the branch portion of the first electrode covers a portion of the insulation layer and is extended into the at least one fourth opening. 
     
     
         8 . The LED of  claim 5 , wherein a spacing is between the insulation layer and the second electrode.