Semiconductor structure with metal gate, and method for manufacturing the same

Abstract

The present disclosure provides a semiconductor structure of a metal gate and a manufacturing method therefor. The manufacturing method includes providing a semiconductor substrate; uniformly depositing a first hard mask layer on the semiconductor substrate, corresponding to a region where the metal gate is located, patterning and etching the first hard mask layer to form a recess, forming a sloping sidewall on a sidewall of the recess, the sloping sidewall and an upper surface of the substrate forming a groove structure, with the size of an upper part of the groove structure being larger than that of a lower part thereof, and forming a metal gate in the groove structure; and removing the first hard mask layer.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a semiconductor substrate;   a sloping sidewall located on the semiconductor substrate and forming a groove structure with an upper surface of the substrate, wherein a size of an upper part of the groove structure being larger than that of a lower part; and   a metal gate located in the groove structure.   
     
     
         2 . The structure of  claim 1 , further comprising:
 a dielectric layer formed on the semiconductor substrate, a surface of the dielectric layer being flush with an upper surface of the metal gate.   
     
     
         3 . The structure of  claim 2 , wherein material of the sloping sidewall is the same material as the dielectric layer. 
     
     
         4 . The structure of  claim 3 , wherein material of the sloping sidewall and the dielectric layer is one or both of silicon nitride and silicon oxide. 
     
     
         5 . The structure of  claim 2 , further comprising lightly doped drain structures located on two sides of the metal gate.