US2019301026A1PendingUtilityA1
Etchant compositions and method for etching
Est. expiryJul 8, 2036(~9.9 yrs left)· nominal 20-yr term from priority
H10P 50/691H10P 50/667H10P 50/00H10W 20/01C09K 13/04C23F 1/26H01L 21/32134H10P 50/642
42
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Claims
Abstract
An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.
Claims
exact text as granted — not AI-modified1 . Etchant composition for batch etching treatment of tungsten film and titanium nitride film comprising a nitric acid and water.
2 . The etchant composition according to claim 1 , further comprising at least one selected from the group consisting of a sulfuric acid and an aliphatic sulfonic acid.
3 . The etchant composition according to claim 2 , wherein the aliphatic sulfonic acid is a methanesulfonic acid.
4 . The etchant composition according to claim 1 further comprising a phosphoric acid.
5 . Method for batch etching of tungsten film and titanium nitride film using the etchant composition according to claim 1 .
6 . The method according to claim 5 , wherein the temperature of the etchant composition at which the etching is performed is 50° C. or higher.
7 . The method according to claim 5 for generating a pattern having a three-dimensional structure.Join the waitlist — get patent alerts
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