Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices

Abstract

Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

I/We claim: 
     
         1 . A method of forming a semiconductor device assembly, the method comprising:
 forming a conductive material adjacent to a semiconductor structure, the semiconductor structure having an active surface;   forming a trench in the semiconductor structure to form first and second semiconductor devices;   forming openings in the conductive material to form electrical contacts for the first and second semiconductor devices;   forming an intermediate material adjacent to the active surface; and   attaching the first and second semiconductor devices to a carrier substrate by the intermediate material.   
     
     
         2 . The method of  claim 1 , further comprising removing a transfer structure attached to the conductive material to expose the electrical contacts. 
     
     
         3 . The method of  claim 1 , further comprising:
 determining a shape of the carrier substrate based on compatibility with a down-stream manufacturing equipment; and   forming the carrier substrate based on the shape.   
     
     
         4 . The method of  claim 3 , wherein the shape corresponds to the semiconductor structure. 
     
     
         5 . The method of  claim 3 , wherein the shape includes a wafer shape. 
     
     
         6 . The method of  claim 3 , wherein the shape includes a square shape. 
     
     
         7 . The method of  claim 3 , wherein the shape includes a rectangular shape. 
     
     
         8 . The method of  claim 1 , further comprising:
 determining a size of the carrier substrate based on compatibility with a down-stream manufacturing equipment; and   forming the carrier substrate based on the size.   
     
     
         9 . The method of  claim 1 , wherein forming the intermediate material includes selectively depositing the intermediate material on the active surface of the semiconductor structure. 
     
     
         10 . The method of  claim 1 , wherein forming the intermediate material includes printing an adhesive at a periphery of the active surface of the semiconductor structure. 
     
     
         11 . The method of  claim 1 , wherein the intermediate material includes a substantially transparent material. 
     
     
         12 . The method of  claim 1 , wherein the intermediate material includes a material capable of altering light passing through the material. 
     
     
         13 . The method of  claim 12 , wherein the material includes a phosphor. 
     
     
         14 . The method of  claim 1 , wherein the intermediate material is defined by a region of chemical bonding between the active surface and an outer surface of the carrier substrate. 
     
     
         15 . The method of  claim 1 , wherein the trench is a first trench, and wherein the method comprises forming a second trench in the carrier substrate. 
     
     
         16 . The method of  claim 15 , wherein the second trench is substantially aligned with the first trench. 
     
     
         17 . The method of  claim 15 , wherein a first sidewall of the first trench is smoother than a second sidewall of the second trench. 
     
     
         18 . A method of forming a semiconductor device assembly, the method comprising:
 forming a conductive material adjacent to a semiconductor structure carried by a support substrate, the semiconductor structure having an active surface;   forming a trench in the semiconductor structure to form first and second semiconductor devices;   forming openings in the conductive material to form electrical contacts for the first and second semiconductor devices;   attaching the first and second semiconductor devices to a transfer structure;   removing the support substrate, after attaching the first and second semiconductor devices to the transfer structure;   forming an intermediate material adjacent to the active surface; and   attaching the first and second semiconductor devices to a carrier substrate by the intermediate material.   
     
     
         19 . The method of  claim 18 , further comprising processing the first and second semiconductor devices on the carrier substrate. 
     
     
         20 . The method of  claim 18 , further comprising:
 determining a shape and a size of the carrier substrate based on compatibility with a down-stream manufacturing equipment; and   forming the carrier substrate based on the shape and the size.