Contacts formed with self-aligned cuts

Abstract

Structures and methods of fabricating structures that include contacts coupled with a source/drain region of a field-effect transistor. Source/drain regions are formed adjacent to a temporary gate structure. A sacrificial layer may be disposed over the source/drain regions and a dielectric pillar is formed in the sacrificial layer between the source/drain regions, followed by deposition of a fill material, replacement of the temporary gate structure with a functional gate structure, and removal of the fill material. Alternatively, the fill material is formed first and the temporary gate structure is replaced by a functional gate structure; following removal of the fill material, a sacrificial layer is disposed over the source/drain regions and a dielectric pillar is formed in the sacrificial layer between the source/drain regions. A conductive layer having separate portions contacting the separate source/drain regions is formed, with the dielectric pillar separating the portions of the conductive layer.

What is claimed is: 
     
         1 . A structure comprising:
 a first source/drain region and a second source/drain region;   a dielectric pillar disposed between the first source/drain region and the second source/drain region, the dielectric pillar arranged to wrap around a portion of the first source/drain region and a portion of the second source/drain region; and   a conductive layer having a first portion in a first contacting relationship with the first source/drain region and a second portion in a second contacting relationship with the second source/drain region,   wherein the dielectric pillar is arranged between the first portion of the conductive layer and the second portion of the conductive layer.   
     
     
         2 . The structure of  claim 1  wherein the dielectric pillar has a first portion and a second portion below the first portion, and the first portion has a first width that is greater than a second width of the second portion. 
     
     
         3 . The structure of  claim 2  wherein the dielectric pillar has a third portion below the second portion, and the first source/drain region and the second source/drain region are arranged between the third portion of the dielectric pillar and the second portion of the dielectric pillar. 
     
     
         4 . The structure of  claim 3  further comprising:
 a conformal dielectric layer having a first portion arranged between the portion of the first source/drain region and the second portion of the dielectric pillar and a second portion arranged between the portion of the second source/drain region and the second portion of the dielectric pillar. 
 
     
     
         5 . The structure of  claim 3  further comprising:
 a dielectric layer arranged beneath the first source/drain region and the second source/drain region, 
 wherein the third portion of the dielectric pillar is arranged over the dielectric layer. 
 
     
     
         6 . The structure of  claim 5  further comprising:
 a first fin structure; and 
 a second fin structure separated from the first fin structure, 
 wherein the first source/drain region is arranged on the first fin structure, the second source/drain region is arranged on the second fin structure, and the first fin structure and the second fin structure each penetrate from a substrate through the dielectric layer. 
 
     
     
         7 . The structure of  claim 3  further comprising:
 a dielectric layer arranged beneath the first source/drain region and the second source/drain region, 
 wherein the dielectric pillar is arranged over the dielectric layer. 
 
     
     
         8 . The structure of  claim 7  further comprising:
 a first fin structure; and 
 a second fin structure separated from the first fin structure, 
 wherein the first source/drain region is arranged on the first fin structure, the second source/drain region is arranged on the second fin structure, and the first fin structure and the second fin structure each penetrate from a substrate through the dielectric layer. 
 
     
     
         9 . The structure of  claim 1  further comprising:
 a conformal dielectric layer having a first portion arranged between the portion of the first source/drain region and the second portion of the dielectric pillar and a second portion arranged between the portion of the second source/drain region and the second portion of the dielectric pillar. 
 
     
     
         10 . The structure of  claim 9  wherein the conformal dielectric layer is comprised of a nitride of silicon, and the dielectric pillar is comprised of an oxide of silicon. 
     
     
         11 . The structure of  claim 1  further comprising:
 a dielectric layer arranged beneath the first source/drain region and the second source/drain region, 
 wherein the dielectric pillar is arranged over the dielectric layer. 
 
     
     
         12 . The structure of  claim 11  further comprising:
 a first fin structure; and 
 a second fin structure separated from the first fin structure, 
 wherein the first source/drain region is arranged on the first fin structure, the second source/drain region is arranged on the second fin structure, and the first fin structure and the second fin structure each penetrate from a substrate through the dielectric layer. 
 
     
     
         13 . The structure of  claim 12  further comprising:
 a first gate structure coupled with the first fin structure; and 
 a second gate structure coupled with the second fin structure. 
 
     
     
         14 . The structure of  claim 13  wherein the first gate structure and the second gate structure each include one or more work function metal layers.