Resonance circuit with a single crystal capacitor dielectric material

Abstract

A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 10 12 defects/cm 2 . A second electrode material is overlying the single crystal capacitor dielectric material.

What is claimed is: 
     
         1 . A single crystal acoustic electronic device, the device comprising:
 a substrate having a cavity formed through a portion of the substrate, the substrate having a surface region and a backside surface region;   a first electrode material coupled to a portion of the backside surface region and spatially configured within the cavity;   a single crystal material formed overlying the cavity and a portion of the surface region; wherein the single crystal material is coupled to the first electrode material through the cavity; and   a second electrode material formed overlying the single crystal material.   
     
     
         2 . The device of  claim 1  wherein the substrate is selected from silicon, silicon carbide, sapphire, gallium arsenide, gallium nitride, aluminum, aluminum nitride, and aluminum oxide, and combinations thereof; wherein the surface region of the substrate is bare and exposed crystalline material, and wherein the single crystal material is deposited overlying the exposed portion of the substrate. 
     
     
         3 . The device of  claim 1  wherein the surface region is configured in an off-set angle. 
     
     
         4 . The device of  claim 1  wherein the each of the first electrode material and the second electrode material is selected from tantalum, molybdenum, platinum, titanium, gold, aluminum tungsten, platinum, or a refractory metal. 
     
     
         5 . The device of  claim 1  further comprising a first contact coupled to the first electrode material and a second contact coupled to the second electrode material such that each of the first contact and the second contact are configured in a co-planar arrangement;
 wherein a portion of the first electrode material spatially configured within the cavity to form a via structure within a portion of the substrate. 
 
     
     
         6 . The device of  claim 1  further comprising a reflector region configured to the first electrode material or the second electrode material. 
     
     
         7 . The device of  claim 1  wherein the single crystal material is selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides; or is selected from a single crystal oxide including a high K dielectric, ZnO, or MgO. 
     
     
         8 . The device of  claim 1  wherein the first electrode material and the single crystal material comprises a first interface region substantially free from an oxide bearing material. 
     
     
         9 . The method of  claim 8  wherein the first electrode material and the single crystal material comprises a second interface region substantially free from an oxide bearing material. 
     
     
         10 . The device of  claim 1  further comprising a nucleation material provided between the single crystal capacitor dielectric material and the first electrode material; and
 wherein the single crystal material is configured in a first strain state to compensate to the substrate. 
 
     
     
         11 . The method of  claim 1  wherein the single crystal capacitor dielectric is configured to propagate a longitudinal signal at an acoustic velocity of 6000 meters/second and greater; and wherein the single crystal material is characterized by a FWHM of less than one degree, and a surface roughness of 2 nm and less, RMS by atomic force microscopy; and further comprising a parameter derived from a two port analysis. 
     
     
         12 . The device of  claim 1  further comprising a capping material provided between the single crystal material and the second electrode material. 
     
     
         13 . A method of fabricating a single crystal acoustic electronic device, the method comprising:
 providing a substrate having a surface region and a backside surface region;   forming a cavity through a portion of the substrate;   forming a first electrode material coupled to a portion of the backside surface region and spatially configured within the cavity;   forming a single crystal material overlying the cavity and a portion of the surface region; wherein the single crystal material is coupled to the first electrode material through the cavity; and   forming a second electrode material overlying the single crystal material.   
     
     
         14 . The method of  claim 13  wherein the substrate is selected from silicon, silicon carbide, sapphire, gallium arsenide, gallium nitride, aluminum, aluminum nitride, and aluminum oxide, and combinations thereof; wherein the surface region of the substrate is bare and exposed crystalline material, and wherein the single crystal material is deposited overlying the exposed portion of the substrate. 
     
     
         15 . The method of  claim 13  wherein the surface region is configured in an off-set angle. 
     
     
         16 . The method of  claim 13  wherein the each of the first electrode material and the second electrode material is selected from tantalum, molybdenum, platinum, titanium, gold, aluminum tungsten, platinum, or a refractory metal. 
     
     
         17 . The method of  claim 13  further comprising forming a first contact coupled to the first electrode material and a second contact coupled to the second electrode material such that each of the first contact and the second contact are configured in a co-planar arrangement;
 wherein a portion of the first electrode material spatially configured within the cavity to form a via structure within a portion of the substrate. 
 
     
     
         18 . The method of  claim 13  further comprising forming a reflector region configured to the first electrode material or the second electrode material. 
     
     
         19 . The method of  claim 13  wherein the single crystal material is selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides; or is selected from a single crystal oxide including a high K dielectric, ZnO, or MgO. 
     
     
         20 . The method of  claim 13  wherein the first electrode material and the single crystal material comprises a first interface region substantially free from an oxide bearing material. 
     
     
         21 . The method of  claim 20  wherein the first electrode material and the single crystal material comprises a second interface region substantially free from an oxide bearing material. 
     
     
         22 . The method of  claim 13  further comprising forming a nucleation material provided between the single crystal capacitor dielectric material and the first electrode material;
 and wherein the single crystal material is configured in a first strain state to compensate to the substrate. 
 
     
     
         23 . The method of  claim 13  wherein the single crystal capacitor dielectric is configured to propagate a longitudinal signal at an acoustic velocity of 6000 meters/second and greater; and wherein the single crystal material is characterized by a FWHM of less than one degree, and a surface roughness of 2 nm and less, RMS by atomic force microscopy; and further comprising a parameter derived from a two port analysis. 
     
     
         24 . The device of  claim 13  further comprising forming a capping material between the single crystal material and the second electrode material. 
     
     
         25 . The method of  claim 13  wherein the forming of the single crystal material includes depositing the single crystal material at a temperature ranging from 400 Degrees C. to 1200 Degrees C. 
     
     
         26 . A method of fabricating a single crystal acoustic electronic device, the method comprising:
 providing a substrate having a surface region;   forming a single crystal material overlying a portion of the surface region, wherein forming the single crystal material includes nucleating a material overlying the surface region, and forming a thickness of the single crystal material overlying the nucleating material;   forming a first electrode material coupled to the single crystal material; and   forming a second electrode material overlying the single crystal material.   
     
     
         27 . The method of  claim 26  wherein the substrate is selected from silicon, silicon carbide, sapphire, gallium arsenide, gallium nitride, aluminum, aluminum nitride, and aluminum oxide, and combinations thereof; wherein the surface region of the substrate is bare and exposed crystalline material, and wherein the single crystal material is deposited overlying the exposed portion of the substrate. 
     
     
         28 . The method of  claim 26  wherein the surface region is configured in an off-set angle. 
     
     
         29 . The method of  claim 26  wherein the each of the first electrode material and the second electrode material is selected from tantalum, molybdenum, platinum, titanium, gold, aluminum tungsten, platinum, or a refractory metal. 
     
     
         30 . The method of  claim 26  further comprising forming a first contact coupled to the first electrode material and a second contact coupled to the second electrode material such that each of the first contact and the second contact are configured in a co-planar arrangement;
 wherein a portion of the first electrode material spatially configured within the cavity to form a via structure within a portion of the substrate. 
 
     
     
         31 . The method of  claim 26  further comprising forming a reflector region configured to the first electrode material or the second electrode material. 
     
     
         32 . The method of  claim 26  wherein the single crystal material is selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides; or is selected from a single crystal oxide including a high K dielectric, ZnO, or MgO. 
     
     
         33 . The method of  claim 26  wherein the first electrode material and the single crystal material comprises a first interface region substantially free from an oxide bearing material. 
     
     
         34 . The method of  claim 33  wherein the first electrode material and the single crystal material comprises a second interface region substantially free from an oxide bearing material. 
     
     
         35 . The method of  claim 26  further comprising forming a nucleation material provided between the single crystal capacitor dielectric material and the first electrode material; and wherein the single crystal material is configured in a first strain state to compensate to the substrate. 
     
     
         36 . The method of  claim 26  wherein the single crystal capacitor dielectric is configured to propagate a longitudinal signal at an acoustic velocity of 6000 meters/second and greater; and wherein the single crystal material is characterized by a FWHM of less than one degree, and a surface roughness of 2 nm and less, RMS by atomic force microscopy; and further comprising a parameter derived from a two port analysis. 
     
     
         37 . The device of  claim 26  further comprising forming a capping material between the single crystal material and the second electrode material. 
     
     
         38 . The method of  claim 26  wherein the forming of the single crystal material includes depositing the single crystal material at a temperature ranging from 400 Degrees C. to 1200 Degrees C.