Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films

Abstract

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 , wherein R 8 , R 9 , and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

1 . A composition for depositing a carbon-doped silicon containing film comprising:
 a precursor comprising at least one compound selected from the group consisting of:
 an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 , wherein 
 R 8  is selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group; 
 R 9  selected from the group consisting of hydrogen, C 1  to C 10  linear or branched alkyl, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group; and 
 L is selected from the group consisting of Cl, Br, and I. 
   
     
     
         2 . The composition of  claim 1  wherein R 8  is selected from the group consisting of Me, Et,  n Pr,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl. 
     
     
         3 . The composition of  claim 1  wherein R 9  is selected from the group consisting of hydrogen, Me, Et,  n P,  i Pr,  n Bu,  i Bu,  s Bu,  t Bu, isomers of pentyl, vinyl, phenyl, and alkyl substituted phenyl. 
     
     
         4 . A method of forming a carbon-doped silicon nitride film via an atomic layer deposition process, the method comprising the steps of:
 a. providing a substrate in a reactor;   b. introducing into the reactor a precursor comprising at least one organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 , wherein   R 8  is selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group;   R 9  selected from the group consisting of hydrogen, C 1  to C 10  linear or branched alkyl, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group; and
 L is selected from the group consisting of Cl, Br, and I; 
   c. purging the reactor with a purge gas;   d. introducing a nitrogen source into the reactor wherein the nitrogen source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixture thereof; and   e. purging the reactor with a purge gas, wherein steps b through e are repeated until a desired thickness of the film is obtained.   
     
     
         5 . A method of forming a carbon-doped silicon oxide film via an atomic layer deposition process, the method comprising the steps of:
 a. providing a substrate in a reactor;   b. introducing into the reactor at least one compound selected from the group consisting of:   an organoaminosilane having a formula of R 9 N(SiR 9 LH) 2 , wherein   R 9  is selected from the group consisting of a C 1  to C 10  linear or branched alkyl group, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group;   R 9  selected from the group consisting of hydrogen, C 1  to C 10  linear or branched alkyl, a C 3  to C 10  cyclic alkyl group, a linear or branched C 2  to C 10  alkenyl group, a linear or branched C 2  to C 10  alkynyl group, a C 5  to C 10  aromatic group, and a C 3  to C 10  saturated or unsaturated heterocyclic group; and
 L is selected from the group consisting of Cl, Br, and I; 
   c. purging the reactor with a purge gas;   d. introducing an oxygen source into the reactor wherein the oxygen source is selected from the group consisting of water, water plasma, oxygen, peroxide, oxygen plasma, ozone, NO, NO 2 , carbon monoxide, carbon dioxide, and combinations thereof; and   e purging the reactor with a purge gas, wherein steps b through e are repeated until a desired thickness of the film is obtained.   
     
     
         6 . A film deposited by the method of  claim 4 . 
     
     
         7 . A film deposited by the method of  claim 5 .