US2019287590A1PendingUtilityA1

Magnetic memory device

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Assignee: TOSHIBA MEMORY CORPPriority: Mar 16, 2018Filed: Sep 10, 2018Published: Sep 19, 2019
Est. expiryMar 16, 2038(~11.6 yrs left)· nominal 20-yr term from priority
Inventors:Masatoshi Yoshikawa
G11C 11/161H01L 43/02H01L 43/08H01L 43/10H10N 50/85H10N 50/80H10B 61/22H10N 50/10
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Claims

Abstract

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

Claims

exact text as granted — not AI-modified
What is claimed to: 
     
         1 . A magnetic memory device comprising:
 a first magnetic layer having a variable magnetization direction;   a second magnetic layer having a fixed magnetization direction; and   a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein   the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer provided between the first sub-magnetic layer and the second sub-magnetic layer, and   the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.   
     
     
         2 . The device according to  claim 1 , wherein
 the first magnetic layer further includes a third sub-magnetic layer having a magnetization direction antiparallel to that of the second sub-magnetic layer, and a second intermediate layer provided between the second sub-magnetic layer and the third sub-magnetic layer, and   the second sub-magnetic layer is provided between the first sub-magnetic layer and the third sub-magnetic layer.   
     
     
         3 . The device according to  claim 2 , wherein
 the third sub-magnetic layer has a magnetization amount smaller than that of the second sub-magnetic layer.   
     
     
         4 . The device according to  claim 2 , wherein
 a sum of the magnetization amount of the first sub-magnetic layer and a magnetization amount of the third sub-magnetic layer is equal to a magnetization amount of the second sub-magnetic layer.   
     
     
         5 . The device according to  claim 1 , further comprising:
 a third magnetic layer having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer and canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.   
     
     
         6 . The device according to  claim 1 , wherein
 the first sub-magnetic layer and the second sub-magnetic layer contain at least cobalt (Co).   
     
     
         7 . The device according to  claim 1 , wherein
 the first intermediate layer contains at least one element selected from ruthenium (Ru), rhodium (Rh), osmium (Os), and iridium (Ir).   
     
     
         8 . A magnetic memory device comprising:
 a first magnetic layer having a variable magnetization direction;   a second magnetic layer having a fixed magnetization direction; and   a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein   the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer provided between the first sub-magnetic layer and the second sub-magnetic layer, and   the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a thickness smaller than that of the second sub-magnetic layer.   
     
     
         9 . The device according to  claim 8 , wherein
 the first magnetic layer further includes a third sub-magnetic layer having a magnetization direction antiparallel to that of the second sub-magnetic layer, and a second intermediate layer provided between the second sub-magnetic layer and the third sub-magnetic layer, and   the second sub-magnetic layer is provided between the first sub-magnetic layer and the third sub-magnetic layer.   
     
     
         10 . The device according to  claim 9 , wherein
 the third sub-magnetic layer has a thickness smaller than that of the second sub-magnetic layer.   
     
     
         11 . The device according to  claim 8 , further comprising:
 a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer and canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.   
     
     
         12 . The device according to  claim 8 , wherein
 the first sub-magnetic layer and the second sub-magnetic layer contain at least cobalt (Co).   
     
     
         13 . The device according to  claim 8 , wherein
 the first intermediate layer contains at least one element selected from ruthenium (Ru), rhodium (Rh), osmium (Os), and iridium (Ir).   
     
     
         14 . A magnetic memory device comprising:
 a first magnetic layer having a variable magnetization direction;   a second magnetic layer having a fixed magnetization direction; and   a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein   the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer provided between the first sub-magnetic layer and the second sub-magnetic layer, and   the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a saturation magnetization smaller than that of the second sub-magnetic layer.   
     
     
         15 . The device according to  claim 14 , wherein
 the first magnetic layer further includes a third sub-magnetic layer having a magnetization direction antiparallel to that of the second sub-magnetic layer and a second intermediate layer provided between the second sub-magnetic layer and the third sub-magnetic layer, and   the second sub-magnetic layer is provided between the first sub-magnetic layer and the third sub-magnetic layer.   
     
     
         16 . The device according to  claim 15 , wherein
 the third sub-magnetic layer has a saturation magnetization smaller than that of the second sub-magnetic layer.   
     
     
         17 . The device according to  claim 14 , further comprising:
 a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer and canceling a magnetic field applied from the second magnetic layer to the first magnetic layer.   
     
     
         18 . The device according to  claim 14 , wherein
 the first sub-magnetic layer and the second sub-magnetic layer contain at least cobalt (Co).   
     
     
         19 . The device according to  claim 14 , wherein
 the first intermediate layer contains at least one element selected from ruthenium (Ru), rhodium (Rh), osmium (Os), and iridium (Ir).

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