Polishing pad, semiconductor fabricating device and fabricating method of semiconductor device

Abstract

A polishing pad is described. The polishing pad includes a surface having plural recess portions, and a substrate is polished by the surface. In the pad, an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm2 or more.

What is claimed is: 
     
         1 . A polishing pad for polishing a substrate, comprising
 a surface for polishing the substrate, the surface including a plurality of recess portions;   wherein an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and   an average density of the recess portions at one area of the surface is 1,300/mm 2  or more.   
     
     
         2 . The polishing pad according to  claim 1 , wherein
 the polishing pad has an elastic modulus of 4.0×10 8  Pa or more at a temperature of 30° C., and an elastic modulus of 2.0×10 8  Pa or more at 60° C.   
     
     
         3 . The polishing pad according to  claim 1 , wherein
 the polishing pad has a Shore hardness of 50 or more and 65 or less.   
     
     
         4 . The polishing pad according to  claim 1 , wherein
 the average width of the recess portions at the one area of the surface in the direction parallel to the surface is 10 μm or more.   
     
     
         5 . The polishing pad according to  claim 1 , wherein
 a shape of the recess portions in the surface is a circular shape, an elliptic shape, or a polygonal shape.   
     
     
         6 . The polishing pad according to  claim 1 , wherein
 a shape of the recess portions in the surface is a triangular shape or a quadrangular shape.   
     
     
         7 . The polishing pad according to  claim 1 , wherein
 the recess portions are formed by using at least one of dry etching, wet etching, a balloon, a foaming agent, cutting, a wire discharge, a laser, or a die.   
     
     
         8 . A semiconductor fabricating device comprising:
 a polishing table which holds a polishing pad which includes a surface having plural recess portions, and in which an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm 2  or more;   a polishing liquid supply configured to supply a polishing liquid to the surface of the polishing pad; and   a polishing head configured to rotate a substrate that is polished by the surface of the polishing pad.   
     
     
         9 . The semiconductor fabricating device according to  claim 8 , further comprising:
 a dresser arranged to perform a dressing of an upper surface of the polishing pad.   
     
     
         10 . The semiconductor fabricating device according to  claim 8 , wherein the average width of the recess portions at the one area of the surface in the direction parallel to the surface is 10 μm or more. 
     
     
         11 . The semiconductor fabricating device according to  claim 8 , further comprising:
 a temperature adjuster configured to adjust a surface temperature of the polishing pad.   
     
     
         12 . The semiconductor fabricating device according to  claim 11 , wherein
 the temperature adjuster is configured to:
 adjust a surface temperature of the polishing pad to a first temperature in a first step of polishing the substrate, and 
 adjust the surface temperature of the polishing pad to a second temperature lower than the first temperature in a second step of polishing the substrate after the first step. 
   
     
     
         13 . The semiconductor fabricating device according to  claim 12 , wherein the temperature adjuster is configured to adjust the surface temperature of the polishing pad such that the first step is performed at a higher polishing rate than that in the second step. 
     
     
         14 . The semiconductor fabricating device according to  claim 12 , wherein the temperature adjuster is configured to adjust the surface temperature of the polishing pad such that the second step increases a flatness of the substrate compared to the first step. 
     
     
         15 . A fabricating method of a semiconductor device, the method comprising:
 holding, by a polishing table, a polishing pad which includes a surface having plural recess portions, wherein an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm 2  or more;   supplying a polishing liquid to the surface of the polishing pad; and   polishing the substrate using the surface of the polishing pad.   
     
     
         16 . The method according to  claim 15 , wherein the average width of the recess portions at the one area of the surface in the direction parallel to the surface is 10 μm or more. 
     
     
         17 . The method of  claim 15 , further comprising:
 dressing an upper surface of the polishing pad before and after the polishing the substrate.   
     
     
         18 . The method of  claim 15 , wherein the step of polishing comprising:
 a first step of polishing in which a surface temperature of the polishing pad is at a first temperature, and   a second step of polishing in which the surface temperature of the polishing pad is changed to a second temperature different from the first temperature.   
     
     
         19 . The method of  claim 18 , wherein first step of polishing is performed at a higher polishing rate than the second step of polishing. 
     
     
         20 . The method of  claim 18 , wherein second step of polishing increase a flatness of the substrate compared to the first step of polishing.