Image sensor and electronic device

Abstract

An image sensor includes a plurality of unit pixels formed as a semiconductor chip, each of which has a photoelectric converting unit, a charge holding unit that holds charges stored in the photoelectric converting unit, a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and light shielding films between which an opening is formed above the photoelectric converting unit. The plurality of unit pixels are placed in a matrix in a pixel array. The shapes of the light shielding films are varied depending on the position of the unit pixel in the pixel array.

What is claimed is: 
     
         1 . An image sensor comprising a plurality of unit pixels formed as a semiconductor chip, each of which has
 a photoelectric converting unit,   a charge holding unit that holds charges stored in the photoelectric converting unit,   a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and   light shielding films between which an opening is formed above the photoelectric converting unit, wherein   the plurality of unit pixels are placed in a matrix in a pixel array, and   the shapes of the light shielding films are varied depending on a position of the unit pixel in the pixel array.   
     
     
         2 . The image sensor according to  claim 1 , wherein at each position of the unit pixel in the pixel array, shapes of the light shielding films are determined according to a direction in which main light rays of light incident on the photoelectric converting unit are directed. 
     
     
         3 . The image sensor according to  claim 1 , wherein a position of the opening formed between the light shielding films is varied depending on the position of the unit pixel in the pixel array. 
     
     
         4 . The image sensor according to  claim 3 , wherein wires of the semiconductor chip are used instead of the light shielding films. 
     
     
         5 . The image sensor according to  claim 1 , wherein a size of the opening formed between the light shielding films is varied depending on the position of the unit pixel in the pixel array. 
     
     
         6 . The image sensor according to  claim 1 , wherein shapes of the wires of the semiconductor chip is further varied depending on the position of the unit pixel in the pixel array. 
     
     
         7 . The image sensor according to  claim 6 , wherein at each position of the unit pixel in the pixel array, the shapes of the light shielding films and the shapes of the wires of the semiconductor chip are determined according to a direction in which the main light rays of light incident on the photoelectric converting unit are directed and a position at which an on-chip lens of the unit pixel is placed is further varied depending on the direction of the main light rays. 
     
     
         8 . An electronic device having an image sensor that includes a plurality of unit pixels formed as a semiconductor chip, each of which has
 a photoelectric converting unit,   a charge holding unit that holds charges stored in the photoelectric converting unit,   a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and   light shielding films between which an opening is formed above the photoelectric converting unit, wherein   a plurality of unit pixels formed as a semiconductor chip; wherein   
       the plurality of unit pixels are placed in a matrix in a pixel array, and
 the shapes of the light shielding films are varied depending on a position of the unit pixel in the pixel array.