Method of processing a substrate using an ion beam and apparatus for performing the same

Abstract

In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

What is claimed is: 
     
         1 . An apparatus for processing a substrate using ion beams, the apparatus comprising:
 a plasma chamber configured to generate a plasma, the plasma chamber having a first end and a second end;   a substrate-processing chamber connected with the plasma chamber and configured to receive a substrate;   first to third grids arranged between the plasma chamber and the substrate-processing chamber, with the first grid nearest the plasma chamber, the third grid nearest the processing chamber and the second grid between the first and third grids; and   an auxiliary heater positioned in the plasma chamber between the first end of the plasma chamber and the first grid to pre-heat the first grid, using a radiant heat.   
     
     
         2 . The apparatus of  claim 1 , wherein a gap between the first grid and the second grid is substantially the same as a gap between the second grid and the third grid, and the auxiliary heater is configured to pre-heat a central portion of the first grid to widen a gap between the central portion of the first grid and a central portion of the second grid. 
     
     
         3 . The apparatus of  claim 1 , wherein a gap between the first grid and the second grid is narrower than a gap between the second grid and the third grid, and the auxiliary heater is configured to pre-heat a central portion of the first grid to equalize a gap between the central portion of the first grid and a central portion of the second grid with a gap between an edge portion of the first grid and an edge portion of the second grid. 
     
     
         4 . The apparatus of  claim 1 , further comprising a lens arranged between the auxiliary heater and the first grid to diverge the radiant heat directed toward the first grid. 
     
     
         5 . The apparatus of  claim 1 , further comprising a substrate holder arranged in the substrate-processing chamber to hold the substrate for etching by the ion beams. 
     
     
         6 . The apparatus of  claim 1 , further comprising:
 a target holder arranged in the substrate-processing chamber to hold a target to which the ion beams are irradiated; and   a substrate holder arranged in the substrate-processing chamber to hold the substrate to receive materials released from the target to thereby deposit the materials on the substrate.