Compositions and Methods Using Same for Deposition of Silicon-Containing Films

Abstract

Described herein are methods and compositions for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.

1 . A method for depositing a silicon nitride film on at least a portion of a surface of a substrate, the method comprising:
 placing the substrate into a reactor;   introducing into the reactor an at least one silicon precursor compound having the following Formulae IIA through IID:   
       
         
           
           
               
               
           
         
       
       wherein R is selected from the group consisting of hydrogen, a halide atom, a linear C 1  to C 10  alkyl group, a branched C 3  to C 10  alkyl group, a linear or branched C 3  to C 12  alkenyl group, a linear or branched C 3  to C 12  alkenyl group, a linear or branched C 3  to C 12  alkynyl group, a C 4  to C 10  cyclic alkyl group, and a C 6  to C 10  aryl group under conditions sufficient to provide a chemisorbed layer, wherein the silicon precursor contains less than about 100 ppm of halide ions;
 c. purging the reactor with a purge gas; 
 d. introducing a plasma source comprising nitrogen into the reactor to react with at least a portion of the chemisorbed layer; and 
 e. optionally purge the reactor with an inert gas; and wherein the steps b through e are repeated until a desired thickness of the silicon nitride film is obtained. 
 
     
     
         2 . The method of  claim 1  wherein the plasma source is selected from the group consisting of nitrogen plasma, nitrogen/helium plasma, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon/plasma, helium plasma, argon plasma, hydrogen plasma, hydrogen/helium plasma, hydrogen/argon plasma, organic amine plasma, and mixtures thereof. 
     
     
         3 . The method of  claim 1  wherein the at least one silicon precursor compound comprises bis(disilylamino)silane. 
     
     
         4 . The method of  claim 3 , wherein the halide ions comprise chloride ions. 
     
     
         5 . The method of  claim 3 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less. 
     
     
         6 . The method of  claim 3 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less. 
     
     
         7 . The method of  claim 3 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less. 
     
     
         8 . The method of  claim 3 , wherein the composition is free of chloride ions. 
     
     
         9 . The method of  claim 1  wherein the plasma in step d is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 . 
     
     
         10 . The method of  claim 1  wherein the silicon nitride has a reflective index of 2.0. 
     
     
         11 . A composition for depositing a silicon nitride or silicon oxide film, the composition comprising:
 at least one silicon precursor compound having the following Formulae IIA and/or IIB:   
       
         
           
           
               
               
           
         
         wherein R is selected from the group consisting of hydrogen, a halide atom, a linear C 1  to C 10  alkyl group, a branched C 3  to C 10  alkyl group, a linear or branched C 3  to C 12  alkenyl group, a linear or branched C 3  to C 12  alkenyl group, a linear or branched C 3  to C 12  alkynyl group, a C 4  to C 10  cyclic alkyl group, and a C 6  to C 10  aryl group, wherein the silicon precursor comprises less than about 100 ppm of halides. 
       
     
     
         12 . The composition of  claim 11 , wherein the halides comprise chloride ions. 
     
     
         13 . The composition of  claim 11 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less. 
     
     
         14 . The composition of  claim 11 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less. 
     
     
         15 . The composition of  claim 11 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less. 
     
     
         16 . The composition of  claim 11 , wherein the composition is free of chloride ions. 
     
     
         17 . The composition of  claim 11  wherein the at least one silicon precursor compound comprises bis(disilylamino)silane. 
     
     
         18 . The composition of  claim 17 , wherein the chloride ions, if present, are present at a concentration of 50 ppm or less. 
     
     
         19 . The composition of  claim 17 , wherein the chloride ions, if present, are present at a concentration of 10 ppm or less. 
     
     
         20 . The composition of  claim 17 , wherein the chloride ions, if present, are present at a concentration of 5 ppm or less. 
     
     
         21 . The composition of  claim 17 , wherein the composition is free of chloride ions.