Semiconductor device and method for manufacturing same

Abstract

According to one embodiment, a semiconductor device includes a substrate, a stacked body, a second air gap, a first insulating film, a semiconductor film, and a stacked film. The stacked body is provided above the substrate and includes a plurality of electrode films stacked via a first air gap. The second air gap extends in a stacking direction of the stacked body. The second air gap separates the stacked body in a first direction crossing the stacking direction. The first insulating film is provided above the stacked body and covers an upper end of the second air gap. The stacked film is provided between a side surface of the electrode film and a side surface of the semiconductor film opposed to the side surface of the electrode film. The stacked film is in contact with the side surface of the electrode film and the side surface of the semiconductor film.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor device comprising:
 a substrate;   a stacked body provided above the substrate and including a plurality of electrode films stacked via a first air gap;   a second air gap extending in a stacking direction of the stacked body, separating the stacked body in a first direction crossing the stacking direction, and communicating with the first air gap;   a first insulating film provided above the stacked body and covering an upper end of the second air gap;   a semiconductor film extending in the stacking direction in the stacked body;   a stacked film including a charge storage portion, the stacked film being provided between a side surface of the electrode film and a side surface of the semiconductor film opposed to the side surface of the electrode film, and the stacked film being in contact with the side surface of the electrode film and the side surface of the semiconductor film; and   an interconnect part extending in the stacking direction, in contact with the substrate, and separating the stacked body in the first direction,   the second air gap extending in the stacking direction adjacent to a side surface of the interconnect part.   
     
     
         22 . The device according to  claim 21 , wherein a spacing between the electrode films opposed in the first direction across the second air gap is larger than a spacing between the electrode films adjacent in the stacking direction via the first air gap. 
     
     
         23 . The device according to  claim 21 , wherein the second air gap extends above an upper surface of an uppermost electrode film. 
     
     
         24 . The device according to  claim 23 , wherein a creepage distance along a surface of the first insulating film between the uppermost electrode film and the interconnect part is larger than a width in the first direction of the second air gap. 
     
     
         25 . The device according to  claim 21 , wherein a protective film made of a material different from a material of the electrode film is provided on a surface of the electrode film opposed to the first air gap and the second air gap. 
     
     
         26 . The device according to  claim 25 , wherein the protective film is a silicon oxide film. 
     
     
         27 . The device according to  claim 25 , wherein the protective film includes at least one of titanium, carbon, fluorine, and hydrogen. 
     
     
         28 . The device according to  claim 21 , wherein a creepage distance between the electrode films along a surface of the stacked film adjacent to the first air gap is larger than a spacing between the electrode films adjacent in the stacking direction. 
     
     
         29 . The device according to  claim 21 , wherein the charge storage portion is divided in the stacking direction at a portion of the stacked film adjacent to the first air gap. 
     
     
         30 . The device according to  claim 21 , further comprising:
 a second insulating film covering end parts of the electrode films,   wherein a creepage distance between the electrode films along a surface of the second insulating film adjacent to the first air gap is larger than a spacing between the electrode films adjacent in the stacking direction.   
     
     
         31 . The device according to  claim 30 , wherein
 the end parts of the electrode films are formed in a staircase shape, and   the device further comprises a plurality of contact vias extending in the stacking direction in the second insulating film to the staircase-shaped end parts of the electrode films.   
     
     
         32 . The device according to  claim 21 , wherein the semiconductor film is in contact with the substrate. 
     
     
         33 . The device according to  claim 21 , wherein the stacked body includes an insulating film provided between a surface of the substrate and a lowermost electrode film. 
     
     
         34 . The device according to  claim 21 , wherein the stacked film includes an insulating film provided between the charge storage portion and the semiconductor film, being in contact with the side surface of the semiconductor film, and extending in the stacking direction. 
     
     
         35 . The device according to  claim 21 , wherein the side surface on the first air gap side of the semiconductor film is covered with the stacked film and not exposed to the first air gap. 
     
     
         36 . The device according to  claim 21 , wherein the electrode films includes a first electrode film functioning a control gate of a memory cell, a second electrode film functioning a control gate of a drain side select transistor, and a third electrode film functioning a control gate of a source side select transistor, the second air gap penetrates through the first electrode film, the second electrode film, and the third electrode film in the stacking direction. 
     
     
         37 . The device according to  claim 21 , further comprising an insulating layer provided between the semiconductor film and the first insulating film, the second air gap extending above an upper surface of the insulating layer.