Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate

Abstract

A semiconductor device includes a first transistor formed on a substrate, the first transistor including a channel region positioned on the substrate; a second transistor formed on the substrate, the second transistor including a channel region positioned on the substrate; a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor; a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor; a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor; an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and a conductive electrode material disposed on the first transistor, the second transistor, and the oxygen absorbing barrier.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first transistor formed on a substrate, the first transistor comprising a channel region positioned on the substrate;   a second transistor formed on the substrate, the second transistor comprising a channel region positioned on the substrate;   a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor;   a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor;   a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor, the first transistor metal gate also positioned on an in contact with the first transistor metal gate;   an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and   a conductive electrode material disposed on the first transistor metal gate on the first transistor and the second transistor.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first transistor is an nFET. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the second transistor is a pFET. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the first transistor metal gate is TiN, TiC, and TiN, TiAl, Al, Ti, or a combination thereof. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the first transistor metal gate is a high oxygen absorbing metal. 
     
     
         6 . The semiconductor of  claim 1 , wherein the first transistor metal gate comprises an oxygen absorbing material. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the second transistor metal gate comprises an oxygen providing material. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the oxygen absorbing barrier comprises a metal. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the oxygen absorbing barrier comprises an alkaline earth metal. 
     
     
         10 . The semiconductor device of  claim 9 , wherein the oxygen absorbing barrier comprises a transition metal. 
     
     
         11 . A semiconductor device, comprising:
 a first transistor formed on a substrate, the first transistor comprising a channel region positioned on the substrate;   a second transistor formed on the substrate, the second transistor comprising a channel region positioned on the substrate;   a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor, the high-k dielectric layer extending continuously over the channel region of the first transistor and the channel region of the second transistor;   a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor;   a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor, the first transistor metal gate also positioned on an in contact with the first transistor metal gate;   an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and   a conductive electrode material disposed on the first transistor metal gate on the first transistor and the second transistor.   
     
     
         12 . The semiconductor device of  claim 11 , wherein the first transistor is an nFET. 
     
     
         13 . The semiconductor device of  claim 12 , wherein the second transistor is a pFET. 
     
     
         14 . The semiconductor device of  claim 11 , wherein the first transistor metal gate is TiN, TiC, and TiN, TiAl, Al, Ti, or a combination thereof. 
     
     
         15 . The semiconductor device of  claim 11 , wherein the first transistor metal gate is a high oxygen absorbing metal. 
     
     
         16 . The semiconductor of  claim 11 , wherein the first transistor metal gate comprises an oxygen absorbing material. 
     
     
         17 . The semiconductor device of  claim 11 , wherein the second transistor metal gate comprises an oxygen providing material. 
     
     
         18 . The semiconductor device of  claim 11 , wherein the oxygen absorbing barrier comprises a metal. 
     
     
         19 . The semiconductor device of  claim 11 , wherein the oxygen absorbing barrier comprises an alkaline earth metal. 
     
     
         20 . The semiconductor device of  claim 19 , wherein the oxygen absorbing barrier comprises a transition metal.