US2019252540A1PendingUtilityA1
Semiconductor devices having lower and upper fins and method for fabricating the same
Est. expiryJul 7, 2034(~7.9 yrs left)· nominal 20-yr term from priority
Inventors:Sung Min KimKyung-Seok OhCheol-Hee KimHeon-Jong ShinJong-Ryeol YooHyun-Jung LeeSeong Hoon Jeong
H01L 29/42392H01L 21/845H01L 27/1211H01L 29/66795H01L 29/785H10D 86/215H10D 86/011H10D 30/6735H10D 30/024H10D 30/62
58
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Claims
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A semiconductor device comprising:
a lower fin that protrudes upwardly from a substrate and that extends in a first direction; an oxide film on the lower fin; an upper fin that extends in the first direction above the lower fin, the upper fin protruding upwardly from the oxide film and spaced apart from the lower fin; and a gate structure on the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film that is between the lower fin and the upper fin.Join the waitlist — get patent alerts
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