Long channels for transistors

Abstract

A semiconductor device includes a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate. The semiconductor device includes a gate arranged on the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack. The semiconductor device includes a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion. The semiconductor device includes a first source/drain and a second source/drain arranged on opposing sides of the gate.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate;   a gate arranged on the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack;   a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion; and   a first source/drain and a second source/drain arranged on opposing sides of the gate.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the channel extends through the gate in three areas. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first nanosheet stack and the second nanosheet stack are coupled on one side of the gate. 
     
     
         4 . The semiconductor device of  claim 3 , wherein the second nanosheet stack and the third nanosheet stack are coupled on another side of the gate. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the first nanosheet stack and the second nanosheet stack are coupled by overlapping epitaxial growth. 
     
     
         6 . The semiconductor device of  claim 5 , wherein the second nanosheet stack and the third nanosheet stack are coupled by overlapping epitaxial growth. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the first nanosheet stack and the second nanosheet stack are coupled by a metal-filled trench. 
     
     
         8 . The semiconductor device of  claim 7 , wherein the second nanosheet stack and the third nanosheet stack are coupled by a metal-filled trench. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack each comprise an epitaxial growth. 
     
     
         10 . A semiconductor device, comprising:
 a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate;   a gate arranged on the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack;   a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion, the channel comprising a length greater than  100  nanometers (nm); and   a first source/drain and a second source/drain arranged on opposing sides of the gate.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the channel extends through the gate in three areas. 
     
     
         12 . The semiconductor device of  claim 10 , wherein the first nanosheet stack and the second nanosheet stack are coupled on one side of the gate. 
     
     
         13 . The semiconductor device of  claim 12 , wherein the second nanosheet stack and the third nanosheet stack are coupled on another side of the gate. 
     
     
         14 . The semiconductor device of  claim 12 , wherein the first nanosheet stack and the second nanosheet stack are coupled by overlapping epitaxial growth. 
     
     
         15 . The semiconductor device of  claim 14 , wherein the second nanosheet stack and the third nanosheet stack are coupled by overlapping epitaxial growth. 
     
     
         16 . The semiconductor device of  claim 10 , wherein the first nanosheet stack and the second nanosheet stack are coupled by a metal-filled trench. 
     
     
         17 . The semiconductor device of  claim 16 , wherein the second nanosheet stack and the third nanosheet stack are coupled by a metal-filled trench. 
     
     
         18 . The semiconductor device of  claim 10 , wherein the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack each comprise an epitaxial growth. 
     
     
         19 . A semiconductor device, comprising:
 a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate; and   a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion.   
     
     
         20 . The semiconductor device of  claim 19 , wherein the channel extends through the gate in three areas.