Apparatus and Method of Manufacturing Oxide Film and Display Apparatus Including the Oxide Film

Abstract

Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

What is claimed is: 
     
         1 . An apparatus for manufacturing an oxide film, the apparatus comprising:
 a lower chamber including a reaction space;   a susceptor in the reaction space, the susceptor configured to support a substrate;   a chamber lid configured to seal the reaction space, the chamber lid including a first gas injection port and one or more second gas injection ports;   a gas distribution module between the susceptor and the chamber lid, the gas distribution module connected to the first gas injection port and the one or more second gas injection ports;   a first source container module connected to the first gas injection port, the first source container module comprising a first source gas having a first vapor pressure;   a first carrier gas supply module connected to the first source container module, the first carrier gas supply module configured to supply a first carrier gas to the first source container module such that the first source gas is injected into the reaction space via the first gas injection port;   a second source container module connected to the first gas injection port, the second source container module comprising a second source gas having a second vapor pressure that is different from the first vapor pressure;   a force gas supply module connected to the second source container module, the force gas supply module configured to supply a force gas to a gas path between the second source container module and the first gas injection port such that the second source gas is injected into the reaction space via the first gas injection port; and   a reactant gas supply module connected to the one or more second gas injection ports, the reactant gas supply module configured to supply a reactant gas into the reaction space.   
     
     
         2 . The apparatus of  claim 1 , further comprising:
 a purge gas supply module configured to supply a purge gas into the reaction space via the first gas injection port.   
     
     
         3 . The apparatus of  claim 1 , wherein a flow rate of the first source gas supplied to the first gas injection port is controlled by the first carrier gas, and
 wherein a density of the second source gas supplied to the first gas injection port is controlled by the force gas.   
     
     
         4 . The apparatus of  claim 1 , wherein the second vapor pressure is greater than the first vapor pressure. 
     
     
         5 . The apparatus of  claim 4 , wherein the first vapor pressure is less than 200 Torr, and
 wherein the second vapor pressure is equal to or greater than 200 Torr.   
     
     
         6 . The apparatus of  claim 4 , further comprising:
 a gas injection pipe connected to the first gas injection port; and   a source gas plumbing line connected between the gas injection pipe and each of the first source container module and the second source container module   
     
     
         7 . The apparatus of  claim 6 , wherein the source gas plumbing line comprises:
 a first branch pipe connected to the gas injection pipe;   a first source gas supply pipe connected between the first branch pipe and the first source container module; and   a second source gas supply pipe connected between first branch pipe and the second source container module, and   wherein the force gas supply module is configured to supply the force gas to the second source gas supply pipe.   
     
     
         8 . The apparatus of  claim 7 , wherein the first source container module comprises a first source container including an input port configured to supply the first carrier gas into the first source container and an output port connected to the first source gas supply pipe and the output port configured to output the first source gas, the first source container configured to vaporize a first organic material contained within the first source container into the first source gas, and
 wherein the first carrier gas supply module comprises:
 a first carrier gas supply pipe connected to the input port of the first source container; 
 a first carrier gas supply source configured to supply the first carrier gas to the first carrier gas supply pipe; and 
 a first flow rate control member installed in the first carrier gas supply pipe to control the flow rate of the first carrier gas. 
   
     
     
         9 . The apparatus of  claim 7 , wherein the second source container module comprises:
 a second source container including an output port connected to the second source gas supply pipe, the second source container configured to vaporize a second organic material contained within the second source container into the second source gas; and   a second flow rate control member installed between the output port of the second source container and the second source gas supply pipe, and   wherein the force gas supply module comprises:
 a force gas supply pipe connected to the second source gas supply pipe; 
 a force gas supply source configured to supply the force gas to the force gas supply pipe; and 
 a third flow rate control member installed in the force gas supply pipe to control the flow rate of the force gas supply pipe. 
   
     
     
         10 . The apparatus of  claim 9 , wherein the force gas supply pipe is closer to the second flow rate control member than the gas injection pipe. 
     
     
         11 . The apparatus of  claim 1 , wherein the reactant gas comprises oxygen (O 2 ), and the gas distribution module is configured to generate a plasmatic reactant gas from the reactant gas and distribute the plasmatic reactant gas to the substrate in the reaction space. 
     
     
         12 . The apparatus of  claim 1 , wherein the reactant gas comprises ozone (O 3 ) or water vapor (H 2 O), and
 wherein the susceptor comprises a substrate heating apparatus configured to heat the substrate.   
     
     
         13 . The apparatus of  claim 11 , wherein the first source gas comprises one material of diethylzinc (DEZn), triisobutylgallium (TIBGa), triethylgallium (TEGa), triethylindium (TEIn), trimethylindium (TMIn), and (3-dimethylaminopropyl)dimethylindium (DADI), and
 wherein the second source gas comprises trimethylgallium (TMGa) or dimethylzinc (DMZn).   
     
     
         14 . The apparatus of  claim 7 , further comprising:
 a third source container module connected to the first gas injection port, the third source container module configured to provide a third source gas having a third vapor pressure that is different from the second vapor pressure; and   a second carrier gas supply module connected to the third source container module, the second carrier gas supply module configured to supply a second carrier gas to the third source container module such that the third gas is injected into the reaction space via the first gas injection port,   wherein a flow rate of the third source gas supplied to the first gas injection port is controlled by the second carrier gas.   
     
     
         15 . The apparatus of  claim 14 , wherein the first source gas comprises one material of diethylzinc (DEZn), triisobutylgallium (TIBGa), triethylgallium (TEGa), triethylindium (TEIn), trimethylindium (TMIn), and (3-dimethylaminopropyl)dimethylindium (DADI),
 the second source gas comprises trimethylgallium (TMGa) or dimethylzinc (DMZn), and   the third source gas comprises tetraethyltin (TESn) or tetramethyltin (TMSn).   
     
     
         16 . The apparatus of  claim 14 , wherein the first source gas comprises one material of (3-dimethylaminopropyl) dimethylindium (DADI), triethylindium (TEIn), and trimethylindium (TMIn),
 wherein the second source gas comprises dimethylzinc (DMZn), and   wherein the third source gas comprises tetraethyltin (TESn) or tetramethyltin (TMSn).   
     
     
         17 . The apparatus of  claim 14 , wherein each of the first source gas, the second source gas, and the third source gas is distributed to the substrate via the apparatus for a process time equal to or less than one second. 
     
     
         18 . The apparatus of  claim 14 , further comprising:
 a fourth source container module connected to the first gas injection port, the fourth source container module configured to provide a fourth source gas having a fourth vapor pressure that is different from the second vapor pressure; and   a third carrier gas supply module configured to supply a third carrier gas to the fourth source container module such that the fourth gas is injected into the reaction space via the first gas injection port,   wherein a flow rate of the fourth source gas supplied to the first gas injection port is controlled by the third carrier gas.   
     
     
         19 . The apparatus of  claim 18 , wherein the first source gas comprises one material of diethylzinc (DEZn), triisobutylgallium (TIBGa), and triethylgallium (TEGa),
 wherein the second source gas comprises trimethylgallium (TMGa) or dimethylzinc (DMZn),   wherein the third source gas comprises one material of (3-dimethylaminopropyl) dimethylindium (DADI), triethylindium (TEIn), and trimethylindium (TMIn), and   the fourth source gas comprises tetraethyltin (TESn) or tetramethyltin (TMSn).   
     
     
         20 . The apparatus of  claim 18 , wherein each of the first source gas, the second source gas, the third source gas, and the fourth source gas is distributed to the substrate via the apparatus for a process time equal to or less than one second. 
     
     
         21 . A method of manufacturing an oxide film, the method comprising:
 generating a first source gas having a first vapor pressure using a first source container module that is connected to a first gas injection port of a process chamber;   generating a second source gas having a second vapor pressure different from the first vapor pressure using a second source container module that is connected to the first gas injection port;   supplying a first carrier gas to the first source container module such that the first source gas is supplied to the first gas injection port;   supplying a force gas to a gas path between the second source container module and the first gas injection port such that the second source gas is supplied to the first gas injection port;   supplying a reactant gas to one or more second gas injection ports of the process chamber;   supplying a purge gas to the first gas injection port; and   distributing the first source gas, the second source gas, the reactant gas, and the purge gas to a substrate in the process chamber.   
     
     
         22 . The method of  claim 21 , wherein a flow rate of the first source gas supplied to the first gas injection port is controlled by the first carrier gas, and
 wherein a density of the second source gas supplied to the first gas injection port is controlled by the force gas.   
     
     
         23 . The method of  claim 21 , wherein the second vapor pressure is higher than the first vapor pressure. 
     
     
         24 . The method of  claim 23 , wherein the first vapor pressure is less than 200 Torr, and
 wherein the second vapor pressure is equal to or more than 200 Torr.   
     
     
         25 . The method of  claim 23 , wherein the first source gas is supplied to the first gas injection port through a first source gas supply pipe connected to the first source container module and a gas injection pipe connected to the first source gas supply pipe using the first carrier gas,
 wherein the second source gas is supplied to the second gas injection port through a second source gas supply pipe connected to the second source container module and the gas injection pipe connected to the second source gas supply pipe, and   wherein the force gas is supplied to the second source gas supply pipe.   
     
     
         26 . The method of  claim 25 , wherein a flow rate of the first source gas supplied from the first source container module to the first source gas supply pipe is controlled by a first flow rate control member that is configured to supply the first carrier gas to the first source container module,
 wherein a flow rate of the second source gas supplied from the second source container module to the second source gas supply pipe is controlled by a second flow rate control member installed in the second source gas supply pipe, and   wherein the force gas is supplied to the second source gas supply pipe through a force gas supply pipe that is closer to the second flow rate control member than the gas injection pipe.   
     
     
         27 . The method of  claim 25 , further comprising:
 generating a third source gas having a third vapor pressure that is different from the second vapor pressure using a third source container module that is connected to the first gas injection port; and   supplying a second carrier gas to the third source container module such that the third source gas is supplied to the first gas injection port via the second carrier gas,   wherein a flow rate of the third source gas that is supplied to the first gas injection port is controlled by the second carrier gas, and   wherein the distribution of the first source gas, the second source gas, the reactant gas, and the purge gas comprises distributing the third source gas to the substrate.   
     
     
         28 . The method of  claim 27 , further comprising:
 generating a fourth source gas having a fourth vapor pressure different from the second vapor pressure using a fourth source container module connected to the first gas injection port; and   supplying a third carrier gas to the fourth source container module such that the fourth source gas is supplied to the first gas injection port via the third carrier gas,   wherein a flow rate of the fourth source gas that is supplied to the first gas injection port is controlled by the third carrier gas, and   wherein the distribution of the first source gas, the second source gas, the reactant gas, and the purge gas comprises distributing the fourth source gas to the substrate.