US2019247974A1PendingUtilityA1

Method for polishing wafer

59
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Oct 30, 2015Filed: Apr 22, 2019Published: Aug 15, 2019
Est. expiryOct 30, 2035(~9.3 yrs left)· nominal 20-yr term from priority
Inventors:Yu-Yi TsaiWen-Pin HoChieh-Han LeeYu-Hsiang Chao
B24B 37/32B24B 53/02B24B 53/12B24B 37/20B24B 57/02B24B 37/107B24B 37/042B24B 37/10B24B 37/34
59
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Claims

Abstract

A method for performing a chemical mechanical polishing (CMP) is disclosed. The method includes supplying a slurry onto a polishing pad, holding a first wafer against the polishing pad by a first polishing head, holding a second wafer against the polishing pad by a second polishing head, and rotating the polishing pad.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method comprising:
 supplying a slurry onto a polishing pad;   holding a first wafer against the polishing pad by a first polishing head;   holding a second wafer against the polishing pad by a second polishing head; and   rotating the polishing pad.   
     
     
         2 . The method of  claim 1 , wherein holding the first wafer against the polishing pad and holding the second wafer against the polishing pad are performed in the same period of time. 
     
     
         3 . The method of  claim 1 , further comprising:
 holding a first grinding piece against the polishing pad, wherein holding the first grinding piece against the polishing pad and holding the first wafer against the polishing pad are performed in the same period of time.   
     
     
         4 . The method of  claim 1 , further comprising:
 holding a first grinding piece against the polishing pad, wherein holding the first grinding piece against the polishing pad, holding the first wafer against the polishing pad, and holding the second wafer against the polishing pad are performed in the same period of time.   
     
     
         5 . The method of  claim 1 , further comprising:
 holding a second grinding piece against the polishing pad, wherein holding the first grinding piece against the polishing pad, holding the first wafer against the polishing pad, holding a second grinding piece against the polishing pad, and holding the second wafer against the polishing pad are performed in the same period of time.   
     
     
         6 . The method of  claim 1 , further comprising:
 supplying a first gas by a first gas source coupled to a chamber of the first polishing head.   
     
     
         7 . The method of  claim 1 , further comprising:
 rotating the first polishing head about a first axis; and   rotating the second polishing head about a second axis, wherein the polishing pad is rotated about a third axis between the first axis and the second axis.   
     
     
         8 . The method of  claim 7 , further comprising:
 holding a first grinding piece against the polishing pad; and   rotating the first grinding piece about the first axis.   
     
     
         9 . The method of  claim 7 , wherein supplying the slurry supplies the slurry between the first axis and the second axis. 
     
     
         10 . The method of  claim 7 , wherein supplying the slurry supplies the slurry between the first axis and the third axis. 
     
     
         11 . A method comprising:
 supplying a slurry onto a polishing pad;   holding a first grinding piece of a first polishing head against the polishing pad;   holding a second grinding piece of a second polishing head against the polishing pad; and   rotating the polishing pad.   
     
     
         12 . The method of  claim 11 , wherein holding the first grinding piece against the polishing pad and holding the second grinding piece against the polishing pad are performed in the same period of time. 
     
     
         13 . The method of  claim 11 , further comprising:
 supplying a first gas by a first gas source coupled to a chamber of the first polishing head.   
     
     
         14 . The method of  claim 11 , further comprising:
 rotating the first grinding piece about a first axis; and   rotating the second grinding piece about a second axis, wherein the polishing pad is rotated about a third axis between the first axis and the second axis.   
     
     
         15 . The method of  claim 14 , wherein supplying the slurry supplies the slurry between the first axis and the second axis. 
     
     
         16 . The method of  claim 14 , wherein supplying the slurry supplies the slurry between the first axis and the third axis. 
     
     
         17 . A method comprising:
 rotating a polishing pad;   conditioning the polishing pad;   polishing a first wafer with the polishing pad by a first polishing head; and   polishing a second wafer with the polishing pad by a second polishing head, wherein conditioning the polishing pad and polishing the first and second wafers are performed in the same period of time.   
     
     
         18 . The method of  claim 17 , further comprising:
 rotating the first polishing head about a first axis; and   rotating the second polishing head about a second axis, wherein the polishing pad is rotated about a third axis between the first axis and the second axis.   
     
     
         19 . The method of  claim 18 , wherein conditioning the polishing pad includes rotating a first grinding piece about the first axis. 
     
     
         20 . The method of  claim 18 , wherein supplying the slurry supplies the slurry between the first axis and the third axis.

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