US2019244978A1PendingUtilityA1

Semiconductor device and a method of manufacturing the same

Assignee: RENESAS ELECTRONICS CORPPriority: Oct 7, 2005Filed: Apr 16, 2019Published: Aug 8, 2019
Est. expiryOct 7, 2025(expired)· nominal 20-yr term from priority
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Claims

Abstract

A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The opening lies over the pad and exposes a surface of the pad. A bump electrode is formed over the surface protective film including the opening. Here, the pad is smaller than the bump electrode. Consequently, the wires are arranged just beneath the bump electrode in the same layer as the pad 10. In other words, the wires are arranged in space which becomes available because the pad is small enough.

Claims

exact text as granted — not AI-modified
1 - 22 . (canceled) 
     
     
         23 . A semiconductor device comprising:
 a glass substrate; and   a semiconductor chip mounted on the glass substrate and having a bump electrode,   wherein the semiconductor chip is connected with the glass substrate through an anisotropic conductive film and the bump electrode.   
     
     
         24 . The semiconductor device according to  claim 23 , further comprising a flexible printed circuit formed on the glass substrate,
 wherein the flexible printed circuit is connected with the glass substrate through the anisotropic conductive film.

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