Semiconductor Devices and Methods of Manufacture Thereof

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method includes forming a contact pad over a semiconductor device. A passivation material is formed over the contact pad. The passivation material has a thickness and is a type of material such that an electrical connection may be made to the contact pad through the passivation material.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate;   a contact pad disposed over the substrate;   a passivation material disposed over the contact pad, wherein sidewalls of the passivation material are coterminous with sidewalls of the contact pad; and   a wire, connector, or contact coupled to the contact pad through the passivation material, the passivation material being interposed between and separating the wire, connector, or contact from the contact pad.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the passivation material comprises a material that is adapted to prevent or reduce corrosion of the contact pad. 
     
     
         3 . The semiconductor device of  claim 1 , further comprising an insulating material disposed over the substrate proximate the contact pad. 
     
     
         4 . The semiconductor device of  claim 3 , wherein a portion of the insulating material is disposed over edges of the contact pad. 
     
     
         5 . The semiconductor device of  claim 4 , wherein the contact pad comprises a first width, wherein an opening in the insulating material proximate the contact pad comprises a second width, and wherein the second width is less than the first width. 
     
     
         6 . The semiconductor device of  claim 1 , further comprising a plurality of first contact pads disposed over the substrate, wherein the plurality of first contact pads comprises the contact pad, wherein the passivation material is disposed over each of the first contact pads, and wherein a wire, a connector, or a contact is coupled to each of the first contact pads through the passivation material. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the passivation material comprises Ti, TiN, TaN, Al 2 O 3 , Ta 2 O 3 , HfO 2 , TiO 2 , or a combination thereof. 
     
     
         8 . A semiconductor device comprising:
 a contact pad over a semiconductor device;   a passivation material over the contact pad; and   a solder connector on an uppermost surface of the passivation material, wherein the solder connector is electrically connected to the contact pad through the passivation material.   
     
     
         9 . The semiconductor device of  claim 8 , wherein the passivation material has a thickness from 10 Å to 1,400 Å. 
     
     
         10 . The semiconductor device of  claim 8 , wherein the solder connector is electrically connected to the contact pad through material of the solder connector diffused into the passivation material. 
     
     
         11 . The semiconductor device of  claim 10 , wherein the solder connector comprises Pb—Sn, Sn, Ag, Cu, or a combination thereof. 
     
     
         12 . The semiconductor device of  claim 8 , wherein sidewalls of the passivation material are coterminous with sidewalls of the contact pad. 
     
     
         13 . The semiconductor device of  claim 8 , wherein the passivation material extends along a top surface and sidewalls of the contact pad and along a top surface of the semiconductor device. 
     
     
         14 . The semiconductor device of  claim 8 , wherein the solder connector is a wire wire bonded to the contact pad through the passivation material. 
     
     
         15 . A semiconductor device comprising:
 a contact pad over a substrate, the contact pad comprising a passivation material over a conductive material, wherein sidewalls of the passivation material and the conductive material are coterminous with one another; and   a connector attached to the contact pad, the passivation material being interposed between the conductive material and the connector.   
     
     
         16 . The semiconductor device of  claim 15 , wherein the connector comprises Au, Cu, Al, Ag, or a combination thereof. 
     
     
         17 . The semiconductor device of  claim 15 , wherein the conductive material comprises Ti, TiN, TaN, Al 2 O 3 , Ta 2 O 3 , HfO 2 , TiO 2 , or a combination thereof. 
     
     
         18 . The semiconductor device of  claim 15 , further comprising an insulating material extending along top surfaces of the passivation material and the substrate and along sidewalls of the passivation material and the conductive material. 
     
     
         19 . The semiconductor device of  claim 18 , wherein the insulating material comprises silicon oxide, silicon nitride, or a combination thereof, and wherein the insulating material has a thickness from 0.1μ to 10 μm. 
     
     
         20 . The semiconductor device of  claim 15 , wherein the conductive material comprises AlCu, AlSi, Al, Cu, or a combination thereof.