Electrochromic device including a means for preventing ion migration and a process of forming the same

Abstract

An electrochromic device can include a substrate; an electrochromic layer or a counter electrode layer over the substrate and including a mobile ion; a first transparent conductive layer over the substrate and including Ag. In one embodiment, the electrochromic device can include a barrier layer disposed between first transparent conductive layer and the electrochromic or counter electrode layer. In another embodiment, the electrochromic device can include means for preventing (1) the mobile ion from migrating into the first transparent conductive layer, (2) Ag from migrating into the electrochromic layer or counter electrode layer, or both (1) and (2). A process of forming an electrochromic device can include forming an electrochromic layer or a counter electrode layer over a substrate; forming a barrier layer; and forming a first transparent conductive layer over the substrate.

What is claimed is: 
     
         1 . An electrochromic device comprising:
 a substrate;   an electrochromic layer or a counter electrode layer over the substrate, wherein the electrochromic or counter electrode layer includes a mobile ion;   a first transparent conductive layer over the substrate and including Ag; and   a barrier layer disposed between first transparent conductive layer and the electrochromic or counter electrode layer, wherein the barrier layer prevents the mobile ion from migrating into the first transparent conductive layer and Ag from migrating into the electrochromic layer or counter electrode layer.   
     
     
         2 . The electrochromic device of  claim 1 , wherein the barrier layer is conformal. 
     
     
         3 . The electrochromic device of  claim 2 , wherein the barrier layer has a thickness of in a range of 5 nm to 200 nm. 
     
     
         4 . The electrochromic device of  claim 1 , wherein the barrier layer includes a metal nitride. 
     
     
         5 . The electrochromic device of  claim 4 , wherein the barrier layer includes AN. 
     
     
         6 . The electrochromic device of  claim 4 , wherein the barrier layer includes TiN. 
     
     
         7 . The electrochromic device of  claim 1 , wherein the barrier layer is spaced apart from the Ag within the first transparent conductive layer. 
     
     
         8 . The electrochromic device of  claim 7 , further comprising a first transparent conductive oxide between the Ag and the barrier layer. 
     
     
         9 . An electrochromic device comprising:
 a substrate;   an electrochromic stack comprising:
 an electrochromic layer or a counter electrode layer over the substrate, wherein the electrochromic or counter electrode layer includes a mobile ion; 
 a first transparent conductive layer over the substrate and including Ag; and 
 a barrier layer disposed between first transparent conductive layer and the electrochromic or counter electrode layer, wherein the barrier layer prevents the mobile ion from migrating into the first transparent conductive layer and Ag from migrating into the electrochromic layer or counter electrode layer; and 
   a second transparent conductive layer.   
     
     
         10 . The electrochromic device of  claim 9 , wherein the first transparent conductive layer is coupled to one of the electrochromic layer and the counter electrode layer, and the second transparent conductive layer is coupled to the other of the electrochromic layer and the counter electrode layer. 
     
     
         11 . A process of forming an electrochromic device comprising:
 providing a substrate;   forming an electrochromic layer or a counter electrode layer over the substrate, wherein after forming the electrochromic or counter electrode layer, the electrochromic or counter electrode layer includes a mobile ion;   forming a barrier layer over the substrate; and   forming a first transparent conductive layer over the substrate and including Ag,   wherein forming the barrier layer is formed between forming the electrochromic or counter electrode layer and forming the first transparent conductive layer, and wherein forming the barrier layer is performed using a metal-silicon compound.   
     
     
         12 . The process of  claim 11 , wherein forming the barrier layer is performed using atomic layer deposition. 
     
     
         13 . The process of  claim 12 , wherein the barrier layer includes titanium silicon nitride, a tantalum silicon nitride, or a tungsten silicon nitride. 
     
     
         14 . The process of  claim 12 , wherein the barrier layer has a thickness of in a range of 5 nm to 200 nm. 
     
     
         15 . The process of  claim 11 , further comprising forming a second transparent oxide along a side of the Ag that is opposite the barrier layer. 
     
     
         16 . The process of  claim 11 , wherein forming the barrier layer is performed using H 2 O, H 2 O 2 , O 2 , or O 3 , or any combination thereof. 
     
     
         17 . The process of  claim 16 , wherein the barrier layer includes a metal oxide. 
     
     
         18 . The process of  claim 17 , wherein the barrier layer includes Al 2 O 3  or TiO 2 . 
     
     
         19 . The process of  claim 11 , wherein the barrier layer is spaced apart from the Ag within the first transparent conductive layer. 
     
     
         20 . The process of  claim 19 , further comprising a first transparent conductive oxide between the Ag and the barrier layer.