Polycrystalline diamond compacts

Abstract

In an embodiment, a polycrystalline diamond compact includes a substrate, and a polycrystalline diamond (“PCD”) table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface. The PCD table includes bonded diamond grains defining interstitial regions. The PCD table includes a first region adjacent to the substrate and a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth. At least a portion of the interstitial regions of the first region include an infiltrant disposed therein. The interstitial regions of the second leached region are substantially free of metal-solvent catalyst. The second region is defined by the exterior working surface, the lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer.

1 . A polycrystalline diamond compact, comprising:
 a substrate; and   a polycrystalline diamond table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
 a first region adjacent to the substrate, at least a portion of the interstitial regions of the first region including an infiltrant disposed therein; and 
 a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth, the interstitial regions of the second leached region being substantially free of metal-solvent catalyst, the second leached region being defined by the exterior working surface, the at least one lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer. 
   
     
     
         2 . The polycrystalline diamond compact of  claim 1  wherein the infiltrant includes at least one material selected from the group consisting of cobalt, iron, and nickel. 
     
     
         3 . The polycrystalline diamond compact of  claim 1  wherein the infiltrant is provided from the substrate. 
     
     
         4 . The polycrystalline diamond compact of  claim 1  wherein substrate includes a cemented carbide substrate. 
     
     
         5 . The polycrystalline diamond compact of  claim 1  wherein the interstitial regions the second leached region are substantially void of material. 
     
     
         6 . The polycrystalline diamond compact of  claim 1  wherein the selected depth is at least about 700 μm. 
     
     
         7 . The polycrystalline diamond compact of  claim 1  wherein the selected depth is about 750 μm to about 2100 μm. 
     
     
         8 . The polycrystalline diamond compact of  claim 1  wherein the selected depth is about 1000 μm to about 2000 μm. 
     
     
         9 . The polycrystalline diamond compact of  claim 1  wherein a thickness of the polycrystalline diamond table is about 0.065 inch to about 0.080 inch. 
     
     
         10 . The polycrystalline diamond compact of  claim 1  wherein the generally horizontal boundary partially defining the second leached region is substantially parallel to the exterior working surface. 
     
     
         11 . The polycrystalline diamond compact of  claim 1  wherein the average grain size of the polycrystalline diamond table is about 30 μm or less. 
     
     
         12 . The polycrystalline diamond compact of  claim 1  wherein the average grain size of the polycrystalline diamond table is about 30 μm or less, a thickness of the polycrystalline diamond table is about 0.065 inch to about 0.080 inch, the second leached region of the polycrystalline diamond table is essentially free of silicon, nickel, or combinations thereof. 
     
     
         13 . The polycrystalline diamond compact of  claim 1  wherein the first region exhibits an infiltration profile that does not correspond to the chamfer or the at least one lateral surface. 
     
     
         14 . The polycrystalline diamond compact of  claim 1  wherein the boundary is an irregular boundary. 
     
     
         15 . The polycrystalline diamond compact of  claim 1  wherein a cross-section of the second leached region exhibits:
 a first depth measured substantially perpendicularly to the upper exterior working surface, the first depth measured from an extension of the upper surface and between an intersection of the upper exterior working surface and the chamfer and an intersection of the extension of the upper exterior working surface and an extension of the at least one lateral surface; and 
 a second depth measured from and substantially perpendicularly to the upper exterior working surface at a location that is spaced from the intersection of the upper exterior working surface and the chamfer; 
 wherein the first depth is greater than the second depth 
 
     
     
         16 . The polycrystalline diamond compact of  claim 15  wherein the first depth is greater than the second depth by at most about 375 μm. 
     
     
         17 . The polycrystalline diamond compact of  claim 15  wherein the first depth is greater than the second depth by at most about 250 μm. 
     
     
         18 . A polycrystalline diamond compact, comprising:
 a cemented carbide substrate including at least one metal-solvent catalyst; and   a polycrystalline diamond table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
 a first region adjacent to the substrate, at least a portion of the interstitial regions of the first region including the at least one metal-solvent catalyst disposed therein; and 
 a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth, the interstitial regions of the second leached region being substantially free of the at least one metal-solvent catalyst, the second leached region being defined by the exterior working surface, the at least one lateral surface, the chamfer, and a boundary located below the chamfer, wherein the boundary is generally horizontal along an entirety thereof. 
   
     
     
         19 . The polycrystalline diamond compact of  claim 18  wherein a cross-section of the second leached region exhibits:
 a first depth measured substantially perpendicularly to the upper exterior working surface, the first depth measured from an extension of the upper surface and between an intersection of the upper exterior working surface and the chamfer and an intersection of the extension of the upper exterior working surface and an extension of the at least one lateral surface; and 
 a second depth measured from and substantially perpendicularly to the upper exterior working surface at a location that is spaced from the intersection of the upper exterior working surface and the chamfer; 
 wherein the first depth is greater than the second depth. 
 
     
     
         20 . A rotary drill bit, comprising:
 a bit body configured to engage a subterranean formation; and   a plurality of polycrystalline diamond cutting elements affixed to the bit body, at least one of the plurality of diamond cutting elements including:
 a substrate; and 
 a polycrystalline diamond table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
 a first region adjacent to the substrate, at least a portion of the interstitial regions of the first region including an infiltrant disposed therein; and 
 a second leached region adjacent to the first region and extending inwardly from the exterior working surface, the interstitial regions of the second leached region being substantially free of metal-solvent catalyst, the second region being defined by the exterior working surface, the at least one lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer; 
 wherein a cross-section of the second leached region exhibits:
 a first depth measured substantially perpendicularly to the upper exterior working surface, the first depth measured from an extension of the upper surface and between an intersection of the upper exterior working surface and the chamfer and an intersection of the extension of the upper exterior working surface and an extension of the at least one lateral surface; and 
 a second depth measured from and substantially perpendicularly to the upper exterior working surface at a location that is spaced from the intersection of the upper exterior working surface and the chamfer; 
 
 
   
       wherein the first depth are substantially the same.