Modified emitter array

Abstract

An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.

What is claimed is: 
     
         1 . A vertical cavity surface emitting laser (VCSEL) array, comprising:
 a first set of VCSELs; and   a second set of VCSELs,
 wherein the first set of VCSELs and the second set of VCSELs are interleaved with each other to form a two-dimensional regular pattern of VCSELs, 
 wherein the first set of VCSELs and the second set of VCSELs are electrically connected in parallel, 
 wherein the second set of VCSELs forms a random pattern of VCSELs within the two-dimensional regular pattern of VCSELs, 
 wherein each VCSEL of the first set of VCSELs has a nominal optical output power at an operating voltage of the VCSEL array, and 
 wherein each VCSEL of the second set of VCSELs has substantially less than the nominal optical output power or no optical output power at the operating voltage. 
   
     
     
         2 . The VCSEL array of  claim 1 , wherein the second set of VCSELs has substantially less than the nominal optical output power based on including a respective current blocking implant. 
     
     
         3 . The VCSEL array of  claim 1 , wherein the second set of VCSELs has substantially less than the nominal optical output power based on including a respective high doped lossy implant. 
     
     
         4 . The VCSEL array of  claim 1 , wherein the second set of VCSELs has substantially less than the nominal optical output power based on including a high doped implant. 
     
     
         5 . The VCSEL array of  claim 1 , wherein the second set of VCSELs has substantially less than the nominal optical output power based on including a damaging implant. 
     
     
         6 . The VCSEL array of  claim 1 , wherein a respective optical output power of the second set of VCSELs is less than approximately fifty percent of the nominal optical output power. 
     
     
         7 . The VCSEL of  claim 1 , wherein the random pattern of VCSELs is a pre-determined random pattern of VCSELs. 
     
     
         8 . A method of forming a vertical cavity surface emitting laser (VCSEL) array, comprising:
 forming a plurality of VCSELs on or within a substrate,
 wherein forming the plurality of VCSELs includes forming a first set of VCSELs and a second set of VCSELs that is randomly interleaved with the first set of VCSELS and that form a two-dimensional regular pattern of VCSELs that are electrically connected in parallel; and 
   degrading a performance of the second set of VCSELs, of the plurality of VCSELs, without degrading the performance of the first set of VCSELs of the plurality of VCSELs,
 wherein degrading the performance of the second set of VCSELs includes degrading the performance of the second set of VCSELs such that the second set of VCSELs has substantially less optical output power than a nominal optical output power of the first set of VCSELs or has no optical output power. 
   
     
     
         9 . The method of  claim 8 , wherein degrading the performance of the second set of VCSELs comprises:
 degrading the performance of the second set of VCSELs in association with forming respective implant isolation material associated with the second set of VCSELs.   
     
     
         10 . The method of  claim 8 , wherein degrading the performance of the second set of VCSELs comprises:
 degrading the performance of the second set of VCSELs in association with forming a respective P-Ohmic metal layer associated with the second set of VCSELs.   
     
     
         11 . The method of  claim 8 , wherein degrading the performance of the second set of VCSELs comprises:
 degrading the performance of the second set of VCSELs in association with forming at least one of:
 a respective top mirror associated with the second set of VCSELs, or 
 a respective bottom mirror associated with the second set of VCSELs. 
   
     
     
         12 . The method of  claim 8 , wherein degrading the performance of the second set of VCSELs comprises:
 degrading the performance of the second set of VCSELs in association with forming a respective set of dielectric vias associated with the second set of VCSELs.   
     
     
         13 . An emitter array, comprising:
 a first set of emitters that has a nominal optical output power at an operating voltage; and   a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage,
 wherein the first set of emitters and the second set of emitters are interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage, 
 wherein the first set of emitters and the second set of emitters are electrically connected in parallel. 
   
     
     
         14 . The emitter array of  claim 13 , wherein the second set of emitters has substantially less than the nominal optical output power based on including a respective etch in a respective mesa structure of the second set of emitters. 
     
     
         15 . The emitter array of  claim 13 , wherein the second set of emitters has substantially less than the nominal optical output power based on including a narrower respective optical aperture relative to the first set of emitters. 
     
     
         16 . The emitter array of  claim 13 , wherein the second set of emitters has substantially less than the nominal optical output power based on including a reduced respective metal contact area relative to the first set of emitters. 
     
     
         17 . The emitter array of  claim 13 , wherein the second set of emitters has substantially less than the nominal optical output power based on including a reduced quantity of respective metal contacts or dielectric via openings relative to the first set of emitters. 
     
     
         18 . The emitter array of  claim 13 , wherein the second set of emitters has substantially less than the nominal optical output power based on including a respective set of metal contacts that constricts light emission via a respective optical aperture of the second set of emitters. 
     
     
         19 . The emitter array of  claim 13 , wherein the second set of emitters has substantially less than the nominal optical output power based on including a respective current blocking implant. 
     
     
         20 . The emitter array of  claim 19 , wherein the respective current blocking implant includes at least one of:
 a respective full emitter current blocking implant,   a respective emitter perimeter current blocking implant,   a respective emitter center current blocking implant, or   the respective current blocking implant located under a respective set of metal contacts associated with the second set of emitters.