Light-emitting device

Abstract

A light-emitting device includes: a light-emitting stack formed on a first conductivity type contact layer and including an active layer and a second conductivity type semiconductor layer on the active layer; a first trench dividing the light-emitting stack into a first portion and a second portion, wherein the first trench includes a bottom exposing a top surface of the first conductivity type contact layer; a non-conductive material layer formed in the first trench and being a film conformal to a profile of the first trench; a connecting layer formed in the first trench and electrically connecting the first and the second portions of the light-emitting stack, wherein the connecting layer is a film conformal to a profile of the non-conductive material layer; and a first electrode formed on the first conductivity type contact layer and electrically connected to the first conductivity type semiconductor layer.

What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a substrate;   a first conductivity type contact layer on the substrate;   a light-emitting stack on the first conductivity type contact layer, comprising an active layer and a second conductivity type semiconductor layer on the active layer;   a first trench dividing the light-emitting stack into a first portion and a second portion, wherein each of the first portion and the second portion comprises a portion of the active layer and a portion of the second conductivity type semiconductor layer and the first trench comprises a bottom exposing a top surface of the first conductivity type contact layer;   a non-conductive material layer formed in the first trench and being a film conformal to a profile of the first trench;   a connecting layer formed in the first trench and electrically connecting the first and the second portions of the light-emitting stack, where in the connecting layer is a film conformal to a profile of the non-conductive material layer; and   a first electrode formed on the first conductivity type contact layer and electrically connected to the first conductivity type semiconductor layer.   
     
     
         2 . The light-emitting device as claimed in  claim 1 , further comprising a transparent conductive layer on the light-emitting stack. 
     
     
         3 . The light-emitting device as claimed in  claim 2 , further comprising a second trench dividing the transparent conductive layer into a first block and a second block. 
     
     
         4 . The light-emitting device as claimed in  claim 3 , wherein the non-conductive material layer is conformal to a profile of the second trench. 
     
     
         5 . The light-emitting device as claimed in  claim 3 , wherein the connecting layer contacts the first block and the second block. 
     
     
         6 . The light-emitting device as claimed in  claim 1 , further comprising a first conductivity type semiconductor layer between the first conductivity type contact layer and the active layer, and the first conductivity type contact layer comprises the same material as that of the first conductivity type semiconductor layer. 
     
     
         7 . The light-emitting device as claimed in  claim 6 , wherein the first conductivity type contact layer has a higher doping level than that of the first conductivity type semiconductor layer. 
     
     
         8 . The light-emitting device as claimed in  claim 1 , wherein the connecting layer comprises a first segment between the first portion and the second portion and a secondary segment on one of the first portion and the second portion. 
     
     
         9 . The light-emitting device as claimed in  claim 8 , wherein a shape of the secondary segment comprises a curve. 
     
     
         10 . The light-emitting device as claimed in  claim 1 , wherein a shape of the light-emitting device from its top view is a rectangle having a longitudinal direction, and the first electrode is disposed near one end of the longitudinal direction of the rectangle. 
     
     
         11 . The light-emitting device as claimed in  claim 10 , wherein a ratio of a length to a width of the rectangle is not smaller than 2. 
     
     
         12 . The light-emitting device as claimed in  claim 6 , wherein the first conductivity type contact layer is exposed by the first trench. 
     
     
         13 . The light-emitting device as claimed in  claim 1 , further comprising a second electrode on one of the first portion and the second portion. 
     
     
         14 . The light-emitting device as claimed in  claim 13 , wherein the second electrode comprises the same material as that of the connecting layer. 
     
     
         15 . The light-emitting device as claimed in  claim 1 , wherein a first current flow through the first portion is equal to a second current flow through the second portion when driving the light-emitting device. 
     
     
         16 . The light-emitting device as claimed in  claim 2 , wherein the conductivity of the connecting layer is larger than the conductivity of the transparent conductive layer. 
     
     
         17 . The light-emitting device as claimed in  claim 3 , wherein a shape of the first trench and a shape of the second trench in a cross section of the light-emitting device are different. 
     
     
         18 . The light-emitting device as claimed in  claim 3 , wherein the first trench comprises a first width along a horizontal direction perpendicular to a stacking direction of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer from a cross section view of the light-emitting device, and the second trench comprises a second width along the horizontal direction perpendicular to the stacking direction from the cross section view of the light-emitting device, and the second width is larger than the first width.