Multi-mode integrated front end module

Abstract

Systems and methods are disclosed for a multi-mode radiofrequency (RF) module comprising a semiconductor die and a power amplifier residing on the die. The power amplifier is configured to operate in a first RF mode corresponding to a first RF wireless technology standard and a second RF mode corresponding to a second RF wireless technology standard. A first set of circuitry within the power amplifier is active in the first RF mode and a second set of circuitry within the power amplifier is active in the second RF mode.

1 . (canceled) 
     
     
         2 . A power amplifier system comprising:
 a power amplifier including a first transistor configured to generate an amplified radiofrequency signal;   a second transistor arranged in a cascode configuration with respect to the first transistor;   a third transistor arranged in a cascode configuration with respect to the first transistor, the second and third transistors being turned on and off respectively in a first mode to output the amplified radiofrequency signal on the second transistor, and being turned off and on respectively in a second mode to output the amplified radiofrequency signal on the third transistor; and   a switch configured to, in the first mode, couple the output from the second transistor to an antenna port and to, in the second mode, couple the output of the third transistor to the antenna port.   
     
     
         3 . The power amplifier system of  claim 2  wherein the second transistor and the third transistor are bipolar junction transistors each arranged as a common base amplifier. 
     
     
         4 . The power amplifier system of  claim 2  further comprising a bias control circuit configured to control the second and third transistors responsive to a control signal indicative of the first mode or the second mode. 
     
     
         5 . The power amplifier system of  claim 2  wherein the first mode is a Bluetooth mode, and the second mode is a WiFi mode. 
     
     
         6 . The power amplifier system of  claim 2  further comprising a second switch having first and second radiofrequency inputs, a switch control input, and a radiofrequency output, the second switch configured to respond to a mode control signal received on the switch control input to selectively couple one of the first and second radiofrequency inputs of the switch to the radiofrequency output of the switch, the radiofrequency output of the switch coupled to a radiofrequency input of the power amplifier. 
     
     
         7 . The power amplifier system of  claim 2  wherein the switch is further configured in a third mode to couple a radio frequency signal that does not pass through the power amplifier to the antenna port. 
     
     
         8 . The power amplifier system of  claim 7  wherein a radiofrequency transmit signal provided on a port of the power amplifier system has a significantly different maximum power output when the power amplifier system is operating in each of the first, second, and third modes. 
     
     
         9 . The power amplifier system of  claim 2  further comprising a radiofrequency receive path including a receive path amplifier, the radiofrequency receive path configured to operate in either of a first receive mode, in which a receive signal output by the receive path is amplified by the receive path amplifier, and a second receive mode, in which the receive signal output by the receive path is not amplified by the receive path amplifier. 
     
     
         10 . The power amplifier system of  claim 9  wherein the receive path amplifier is a low noise amplifier. 
     
     
         11 . The power amplifier system of  claim 10  wherein circuitry in the radiofrequency receive path determines whether to operate in the first receive mode or the second receive mode based at least in part on a radiofrequency receive signal strength. 
     
     
         12 . The power amplifier system of  claim 2  further comprising dynamically configurable impedance matching circuitry configured to adjust an output impedance of the power amplifier based on whether the second and third transistors are in the first mode or the second mode. 
     
     
         13 . The power amplifier system of  claim 2  wherein the first mode corresponds to a first local area network wireless standard, the second mode corresponds to a second local area network wireless network standard, and the power amplifier system is incorporated on a mobile phone capable of supporting at least a third mode corresponding to a wide area network standard. 
     
     
         14 . The power amplifier system of  claim 13  wherein the third wireless technology standard is a Long-Term Evolution standard. 
     
     
         15 . The power amplifier system of  claim 2  wherein the first transistor receives stabilizing feedback from at least one of the second and third transistors. 
     
     
         16 . A wireless device comprising:
 a power amplifier including a first transistor configured to generate an amplified radiofrequency signal;   a second transistor arranged in a cascode configuration with respect to the first transistor;   a third transistor arranged in a cascode configuration with respect to the first transistor, the second and third transistors being turned on and off respectively in a first mode to output the amplified radiofrequency signal on the second transistor, and being turned off and on respectively in a second mode to output the amplified radiofrequency signal on the third transistor;   an antenna configured to wirelessly transmit a signal; and   a switch configured to, in the first mode, couple the output from the second transistor to the antenna and to, in the second mode, couple the output of the third transistor to the antenna.   
     
     
         17 . The wireless device of  claim 16  wherein the first transistor receives stabilizing feedback from at least one of the second and third transistors. 
     
     
         18 . The wireless device of  claim 16  further comprising dynamically configurable impedance matching circuitry configured to adjust an output impedance of the power amplifier based on whether the second and third transistors are in the first mode or the second mode. 
     
     
         19 . A radio frequency module comprising:
 a semiconductor die;   a power amplifier implemented on the die and including a first transistor configured to generate an amplified radiofrequency signal;   a second transistor arranged in a cascode configuration with respect to the first transistor;   a third transistor arranged in a cascode configuration with respect to the first transistor, the second and third transistors being turned on and off respectively in a first mode to output the amplified radiofrequency signal on the second transistor, and being turned off and on respectively in a second mode to output the amplified radiofrequency signal on the third transistor; and   a switch configured to, in the first mode, couple the output from the second transistor to an antenna port and to, in the second mode, couple the output of the third transistor to the antenna port.   
     
     
         20 . The radiofrequency module of  claim 19  wherein the first transistor receives stabilizing feedback from at least one of the second and third transistors. 
     
     
         21 . The radiofrequency module of  claim 19  further comprising dynamically configurable impedance matching circuitry configured to adjust an output impedance of the power amplifier based on whether the second and third transistors are in the first mode or the second mode.