US2019229230A1PendingUtilityA1

Template for growing group iii-nitride semiconductor layer, group iii-nitride semiconductor light emitting device, and manufacturing method therefor

43
Assignee: AN SANG JEONGPriority: May 2, 2016Filed: Apr 28, 2017Published: Jul 25, 2019
Est. expiryMay 2, 2036(~9.8 yrs left)· nominal 20-yr term from priority
Inventors:Sang Jeong An
H10P 72/7424H10P 72/7416H10P 72/74H10P 54/00H10W 90/754H10W 72/07554H10W 72/884H10W 72/547H10W 99/00H10W 74/019H10W 74/014H10W 70/60H10W 70/635H10W 40/228H01L 33/641H01L 33/0075H01L 33/22H01L 33/62H01L 33/32H01L 33/007H01L 33/46H10H 20/8581H10H 20/858H10H 20/857H10H 20/841H10H 20/825H10H 20/0137H10H 20/85H10H 20/82H10H 20/81H10H 20/80H10H 20/01335H10H 20/0364H10H 20/0365H10H 20/8582H10H 20/8312H10H 20/018
43
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

Claims

exact text as granted — not AI-modified
1 . A template for growing Group III-nitride semiconductor layers, comprising:
 a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane;   an insert for heat dissipation placed and secured in the groove; and   a nucleation layer formed on a partially removed portion of the first plane.   
     
     
         2 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein the insert for heat dissipation is made of a ferromagnetic metal. 
     
     
         3 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein the insert for heat dissipation has a bonding wire form. 
     
     
         4 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein the insert for heat dissipation is formed by heat treatment of one of metal powder, alloy powders and ceramic powder. 
     
     
         5 . The template for growing Group III-nitride semiconductor layers of  claim 1 , comprising:
 a fixation substance for securing the insert for heat dissipation in the groove.   
     
     
         6 . The template for growing Group III-nitride semiconductor layers of  claim 1 , further comprising:
 a high reflectivity substance disposed between the growth substrate and the fixation substance within the groove.   
     
     
         7 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein the insert for heat dissipation is extended from the first plane to the second plane. 
     
     
         8 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein the insert for heat dissipation extends inwards from the first plane up to a point before reaching the second plane of the growth substrate. 
     
     
         9 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein the nucleation layer is made of AlN or AlNO. 
     
     
         10 . The template for growing Group III-nitride semiconductor layers of  claim 1 , wherein protrusions are formed on the first plane. 
     
     
         11 .- 28 . (canceled)

Join the waitlist — get patent alerts

Track US2019229230A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.