Methods of patterning dielectric layers for metallization and related structures

Abstract

Structures including metallization layers and metal lines, and methods of forming thereof. A patterning stack, a masking layer, and a spacer patterning layer are formed over a dielectric layer, and an opening is formed in the spacer patterning layer. First and second spacers are formed on a portion of the masking layer at sidewalls of an opening in the spacer patterning layer. The first spacer and the second spacer overlie and traverse first portions of the dummy line. After removing the spacer patterning layer and masking layer, second portions of the dummy line are removed to form a feature in the patterning stack that includes a first gap beneath the first spacer and a second gap beneath the second spacer. A metal line is formed in the dielectric layer using the feature, and includes cuts at the first gap and the second gap in the feature.

What is claimed is: 
     
         1 . A structure comprising:
 a first metallization layer comprising a plurality of first metal lines and a metal island, the metal island electrically isolated from the plurality of first metal lines;   a second metallization layer disposed below the first metallization layer, the second metallization layer including a second metal line;   a third metallization layer disposed above the first metallization layer, the third metallization layer including a third metal line;   a first conductive via connecting the metal island to the second metal line; and   a second conductive via connecting the metal island to the third metal line.   
     
     
         2 . The structure of  claim 1  wherein the metal island has a length of less than or equal to fifteen nm. 
     
     
         3 . The structure of  claim 1  wherein the metal island is comprised of cobalt or ruthenium. 
     
     
         4 . The structure of  claim 1  wherein the metal island is comprised of cobalt. 
     
     
         5 . The structure of  claim 1  wherein the metal island, the first conductive via, and the second conductive via are comprised of the same material. 
     
     
         6 . The structure of  claim 1  wherein the first metallization level includes a fourth metal line arranged adjacent to the first metal line, and the fourth metal line is spaced from the first metal line by a first gap with a dimension of about five nm. 
     
     
         7 . The structure of  claim 6  wherein the metal island has a length of less than or equal to fifteen nm. 
     
     
         8 . The structure of  claim 6  wherein the first metallization level includes a fifth metal line arranged adjacent to the first metal line, the first metal line is laterally arranged between the fourth metal line and the fifth metal line, and the fifth metal line is spaced from the first metal line by a second gap with a dimension of about five nm. 
     
     
         9 . The structure of  claim 8  wherein the metal island has a length of less than or equal to fifteen nm. 
     
     
         10 . The structure of  claim 6  wherein the metal island and the fourth metal line are comprised of cobalt. 
     
     
         11 . The structure of  claim 6  wherein the metal island, the fourth metal line, the first conductive via, and the second conductive via are comprised of the same material. 
     
     
         12 . The structure of  claim 6  wherein the first metallization level includes a dielectric layer, and the gap is filled by dielectric material of the dielectric layer. 
     
     
         13 . The structure of  claim 1  wherein the metal island is substantially equal in size to the first conductive via. 
     
     
         14 . The structure of  claim 1  wherein the metal island is substantially equal in size to the second conductive via. 
     
     
         15 . The structure of  claim 1  wherein the metal island is substantially equal in size to the first conductive via, and the metal island is substantially equal in size to the second conductive via. 
     
     
         16 . A structure comprising:
 a first metallization layer comprising a plurality of first metal lines and a metal island, the metal island electrically isolated from the plurality of first metal lines;   a second metallization layer disposed below the first metallization layer, the second metallization layer including a second metal line;   a third metallization layer disposed above the first metallization layer, the third metallization layer including a third metal line;   a first conductive via connecting the metal island to the second metal line; and   a second conductive via connecting the metal island to the third metal line,   wherein the metal island is comprised of cobalt, the metal island has a length of less than or equal to fifteen nm, and the metal island is comprised of cobalt, and the metal island is substantially equal in size to the first conductive via.   
     
     
         17 . The structure of  claim 16  wherein the first metallization level includes a fourth metal line arranged adjacent to the first metal line, and the fourth metal line is spaced from the first metal line by a first gap with a dimension of about five nm. 
     
     
         18 . The structure of  claim 17  wherein the first metallization level includes a fifth metal line arranged adjacent to the first metal line, the first metal line is laterally arranged between the fourth metal line and the fifth metal line, and the fifth metal line is spaced from the first metal line by a second gap with a dimension of about five nm. 
     
     
         19 . The structure of  claim 16  wherein the metal island is substantially equal in size to the second conductive via. 
     
     
         20 . The structure of  claim 16  wherein the first metallization level includes a dielectric layer, and the gap is filled by dielectric material of the dielectric layer.