Manufacturing method of semiconductor device

Abstract

A semiconductor device includes: a chip mounting portion having a lower surface on which a first ditch is formed; a semiconductor chip mounted on an upper surface of the chip mounting portion; a lead electrically connected to a pad of the semiconductor chip through a conductive member; and a sealing body configured to seal the semiconductor chip, wherein the lower surface of the chip mounting portion is exposed from the sealing body, and wherein a plating film is formed on the lower surface including an inside of the first ditch.

1 . A semiconductor device comprising:
 a chip mounting portion having a lower surface on which a first ditch is formed;   a semiconductor chip mounted on an upper surface of the chip mounting portion;   a lead electrically connected to a pad of the semiconductor chip through a conductive member; and   a sealing body configured to seal the semiconductor chip,   wherein the lower surface of the chip mounting portion is exposed from the sealing body, and   wherein a plating film is formed on the lower surface including an inside of the first ditch.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein resin constituting the sealing body is not formed inside the first ditch.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein the first ditch is formed along an outer peripheral portion of the chip mounting portion.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein a depth of the first ditch is ½ or less of a thickness of the chip mounting portion.   
     
     
         5 . The semiconductor device according to  claim 1 ,
 wherein the first ditch has a V-shaped cross section.   
     
     
         6 . The semiconductor device according to  claim 1 ,
 wherein a second ditch is further formed on the lower surface of the chip mounting portion so as to be spaced apart from the first ditch.   
     
     
         7 . The semiconductor device according to  claim 6 ,
 wherein the second ditch is formed on an inner side of the chip mounting portion relative to the first ditch.   
     
     
         8 . The semiconductor device according to  claim 6 ,
 wherein a depth of the first ditch and a depth of the second ditch are both ½ or less of a thickness of the chip mounting portion.   
     
     
         9 . The semiconductor device according to  claim 7 ,
 wherein a depth of the first ditch is deeper than a depth of the second ditch.   
     
     
         10 . The semiconductor device according to  claim 6 ,
 wherein the plating film is formed also on an inner wall of the second ditch.   
     
     
         11 . The semiconductor device according to  claim 6 ,
 wherein resin constituting the sealing body is not formed inside the second ditch.   
     
     
         12 . The semiconductor device according to  claim 1 ,
 wherein a step portion spaced apart from the first ditch is formed at an outer end of the lower surface of the chip mounting portion.   
     
     
         13 . The semiconductor device according to  claim 12 ,
 wherein the first ditch is formed on an inner side of the step portion.   
     
     
         14 . The semiconductor device according to  claim 12 ,
 wherein a depth of the first ditch is shallower than a difference in level of the step portion.   
     
     
         15 . The semiconductor device according to  claim 12 ,
 wherein a second ditch is formed on an inner side of the first ditch on the lower surface of the chip mounting portion, and   a distance between the step portion and a center position of the first ditch is smaller than a distance between the center position of the first ditch and a center position of the second ditch in a cross-sectional view.   
     
     
         16 . The semiconductor device according to  claim 12 ,
 wherein resin constituting the sealing body is formed inside the step portion.   
     
     
         17 . The semiconductor device according to  claim 1 ,
 wherein the chip mounting portion has a first side extending in a first direction, a second side crossing the first side, and a corner portion which is an intersection of the first side and the second side,   wherein the first ditch includes a first portion parallel to the first side, a second portion parallel to the second side, and a third portion connecting the first portion and the second portion, and   wherein a distance between the third portion of the first ditch and the corner portion is longer than a distance between the first portion of the first ditch and the first side, and is longer than a distance between the second portion of the first ditch and the second side.   
     
     
         18 . The semiconductor device according to  claim 17 ,
 wherein an angle formed by the third portion and the first portion is an obtuse angle, and   wherein an angle formed by the third portion and the second portion is an obtuse angle.