Thin-film transistor, array substrate, display panel and display device

Abstract

Embodiments of the disclosure provide a thin-film transistor, an array substrate, a display panel and a display device. The thin-film transistor includes a current enhancement portion, and the current enhancement portion is provided between a drain and a source. The current enhancement portion may include at least one protrusion portion, and the protrusion portion is provided on the drain and/or the source and faces a channel. The current enhancement portion may include an island portion provided between the drain and the source, and the island portion is separate from the drain and the source. The island portion may include at least one protrusion end, and the at least one protrusion end faces the drain and/or the source.

1 . A thin-film transistor comprising a gate, a drain, a source and a channel, wherein the thin-film transistor further comprises a current enhancement portion, and the current enhancement portion is provided between the drain and the source. 
     
     
         2 . The thin-film transistor according to  claim 1 , wherein the current enhancement portion includes at least one protrusion portion, and the at least one protrusion portion is provided on at least one of the drain or the source, and faces the channel. 
     
     
         3 . The thin-film transistor according to  claim 2 , wherein the at least one protrusion portion is trapezoidal shaped, triangular shaped or semi-circular shaped. 
     
     
         4 . The thin-film transistor according to  claim 2 , wherein the at least one protrusion portion provided on the drain and the at least one protrusion portion provided on the source are arranged correspondingly. 
     
     
         5 . The thin-film transistor according to  claim 2 , wherein the at least one protrusion portion includes a tip. 
     
     
         6 . The thin-film transistor according to  claim 1 , wherein the current enhancement portion includes an island portion provided between the drain and the source, and the island portion is separate from the drain and the source. 
     
     
         7 . The thin-film transistor according to  claim 6 , wherein the island portion includes at least one protrusion end, and the at least one protrusion end faces at least one of the drain or the source. 
     
     
         8 . The thin-film transistor according to  claim 7 , wherein the current enhancement portion includes at least one protrusion portion, and the at least one protrusion portion is provided on at least one of the drain or the source, and faces the channel;
 the at least one protrusion end and the at least one protrusion portion are arranged correspondingly.   
     
     
         9 . The thin-film transistor according to  claim 7 , wherein the at least one protrusion end is a tip. 
     
     
         10 . The thin-film transistor according to  claim 1 , wherein the current enhancement portion is made of a metal material which is the same as that of the drain and the source. 
     
     
         11 . An array substrate comprising a display region and a non-display region, wherein at least one of the display region and/or the non-display region include the thin-film transistor according to  claim 1 . 
     
     
         12 . A display panel that includes the array substrate according to  claim 11 . 
     
     
         13 . A display device that includes the display panel according to  claim 12 . 
     
     
         14 . The thin-film transistor according to  claim 11 , wherein the current enhancement portion includes at least one protrusion portion, and the at least one protrusion portion is provided on at least one of the drain or the source, and faces the channel. 
     
     
         15 . The thin-film transistor according to  claim 14 , wherein the at least one protrusion portion is trapezoidal shaped, triangular shaped or semi-circular shaped. 
     
     
         16 . The thin-film transistor according to  claim 14 , wherein the at least one protrusion portion is provided on the drain and the source, and the at least one protrusion portion provided on the drain and the at least one protrusion portion provided on the source are arranged correspondingly. 
     
     
         17 . The thin-film transistor according to  claim 11 , wherein the current enhancement portion includes an island portion provided between the drain and the source, and the island portion is separate from the drain and the source. 
     
     
         18 . The thin-film transistor according to  claim 17 , wherein the island portion includes at least one protrusion end, and the at least one protrusion end faces at least one of the drain or the source. 
     
     
         19 . The thin-film transistor according to  claim 18 , wherein the current enhancement portion includes at least one protrusion portion, and the at least one protrusion portion is provided on at least one of the drain or the source, and faces the channel;
 the at least one protrusion end and the at least one protrusion portion are arranged correspondingly.   
     
     
         20 . The thin-film transistor according to  claim 18 , wherein the protrusion end is a tip.