Method of manufacturing semiconductor optical device and semiconductor optical device

Abstract

Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate 30 on the InP growth substrate; a step of bonding the semiconductor laminate 30 to the support substrate 80 formed from a Si substrate, with at least the metal bonding layer 70 therebetween; and a step of removing the InP growth substrate 10.

1 . A method of manufacturing a semiconductor optical device, comprising:
 a step of forming a semiconductor laminate in which a plurality of InGaAsP-based III-V compound semiconductor layers containing at least In and P are stacked, on an InP growth substrate;   a step of bonding the semiconductor laminate to a conductive support substrate formed from a Si substrate with at least a metal bonding layer therebetween; and   a step of removing the InP growth substrate.   
     
     
         2 . The method of manufacturing a semiconductor optical device, according to  claim 1 , further comprising a grinding step of grinding the conductive support substrate to a thickness in a range of 80 μm or more and less than 200 μm. 
     
     
         3 . A method of manufacturing a semiconductor optical device, comprising:
 a first step of forming a semiconductor laminate in which a plurality of InGaAsP-based III-V compound semiconductor layers containing at least In and P are stacked, on an InP growth substrate;   a second step of forming a contact layer formed of a III-V compound semiconductor on the semiconductor laminate;   a third step of forming an ohmic metal portion on part of the contact layer leaving an exposed area on a surface of the contact layer;   a fourth step of removing the contact layer of the exposed area so that a surface of the semiconductor laminate is exposed, thereby forming a contact portion composed of the ohmic metal portion and the contact layer and forming an exposed surface of the semiconductor laminate;   a fifth step of forming a dielectric layer on at least part of the exposed surface of the semiconductor laminate;   a sixth step of forming a reflective metal layer mainly containing Au on the dielectric layer and the contact portion;   a seventh step of bonding a conductive support substrate having a surface provided with a metal bonding layer to the reflective metal layer with the metal bonding layer therebetween; and   an eighth step of removing the InP growth substrate,   wherein the support substrate is a conductive Si substrate.   
     
     
         4 . The method of manufacturing a semiconductor optical device, according to  claim 3 , further comprising a grinding step of grinding the conductive support substrate to a thickness in a range of 80 μm or more and less than 200 μm. 
     
     
         5 . The method of manufacturing a semiconductor optical device, according to  claim 3 , wherein the semiconductor laminate includes an n-type cladding layer, an active layer, and a p-type cladding layer in this order, and
 the n-type cladding layer, the active layer, and the p-type cladding layer are layers formed of an InGaAsP-based III-V compound semiconductor containing at least In and P.   
     
     
         6 . The method of manufacturing a semiconductor optical device, according to  claim 5 , wherein the semiconductor laminate has one of a double heterostructure and a multiple quantum-well structure. 
     
     
         7 . The method of manufacturing a semiconductor optical device, according to  claim 3 , wherein the dielectric layer is formed of SiO 2 . 
     
     
         8 . A semiconductor optical device comprising:
 a conductive support substrate formed from a Si substrate;   a metal bonding layer provided on a surface of the support substrate; and   a semiconductor laminate in which a plurality of InGaAsP-based III-V compound semiconductor layers containing at least In and P are stacked, the semiconductor laminate being provided on the metal bonding layer.   
     
     
         9 . The semiconductor optical device according to  claim 8 , wherein a thickness of the conductive support substrate is in a range of 80 μm or more and less than 200 μm. 
     
     
         10 . A semiconductor optical device comprising:
 a conductive support substrate;   a metal bonding layer provided on a surface of the conductive support substrate;   a reflective metal layer provided on the metal bonding layer;   a semiconductor laminate in which a plurality of InGaAsP-based III-V compound semiconductor layers containing at least In and P are stacked, the semiconductor laminate being provided on the reflective metal layer; and   a dielectric layer and a contact portion that are provided in parallel between the reflective metal layer and the semiconductor laminate,   the reflective metal layer mainly contains Au, and   the conductive support substrate is formed from a conductive Si substrate.   
     
     
         11 . The semiconductor optical device according to  claim 10 , wherein a thickness of the conductive support substrate is in a range of 80 μm or more and less than 200 μm. 
     
     
         12 . The semiconductor optical device according to  claim 10 , wherein the semiconductor laminate includes an n-type cladding layer, an active layer, and a p-type cladding layer in this order, and
 the n-type cladding layer, the active layer, and the p-type cladding layer are layers formed of an InGaAsP-based III-V compound semiconductor containing at least In and P.   
     
     
         13 . The semiconductor optical device according to  claim 12 , wherein the semiconductor laminate has one of a double heterostructure and a multiple quantum-well structure. 
     
     
         14 . The semiconductor optical device, according to  claim 10 , wherein the dielectric layer is formed of SiO 2 .