Heterojunction solar cell and manufacturing method thereof

Abstract

A method for manufacturing a heterojunction solar cell, includes forming a metal compound on a semiconductor substrate, forming a transparent conductive oxide on the metal compound, forming an electrode forming material on the transparent conductive oxide and sintering the electrode forming material using light sintering to form an electrode part, wherein the transparent conductive oxide is also sintered by the light sintering to form a transparent conductive oxide layer formed of the transparent conductive oxide.

What is claimed is: 
     
         1 . A method for manufacturing a heterojunction solar cell, the method comprising:
 forming a metal compound on a semiconductor substrate;   forming a transparent conductive oxide on the metal compound;   forming an electrode forming material on the transparent conductive oxide; and   sintering the electrode forming material using light sintering to form an electrode part,   wherein the transparent conductive oxide is also sintered by the light sintering to form a transparent conductive oxide layer formed of the transparent conductive oxide.   
     
     
         2 . The method of  claim 1 , wherein a metal compound layer formed of the metal compound, the transparent conductive oxide layer, and the electrode part are simultaneously formed by light sintering the metal compound when light sintering the transparent conductive oxide and the electrode forming material. 
     
     
         3 . The method of  claim 2 , wherein the light sintering of the electrode forming material is carried out by using a xenon flash lamp having an energy (E) of 5 J/cm 2  to 500 J/cm 2 , a pulse width (W) of 0.1 ms to 50 ms, a pulse number (N) of 1 to 100 times, and a pulse gap of 1 ms to 100 ms. 
     
     
         4 . The method of  claim 1 , wherein a metal compound layer formed of the metal compound and the transparent conductive oxide layer are formed by light sintering the metal compound and the transparent conductive oxide, and then the electrode part is formed by coating, drying, and light sintering the electrode forming material. 
     
     
         5 . The method of  claim 4 , wherein the light sintering of the electrode forming material is carried out by using a xenon flash lamp having an energy (E) of 5 J/cm 2  to 500 J/cm 2 , a pulse width (W) of 0.1 ms to 50 ms, a pulse number (N) of 1 to 100 times, and a pulse gap of 1 ms to 100 ms. 
     
     
         6 . The method of  claim 5 , wherein the light sintering of the metal compound and the transparent conductive oxide is carried out by using the xenon flash lamp with energy and pulse number lower than the energy and the pulse number of the xenon flash lamp used for light sintering the electrode forming material. 
     
     
         7 . The method of  claim 1 , wherein the metal compound is formed of any one of the binary metal oxides selected from molybdenum oxide, titanium oxide, vanadium oxide, tungsten oxide, zinc oxide, manganese oxide, nickel oxide, and chromium oxide. 
     
     
         8 . The method of  claim 1 , wherein the transparent conductive oxide is formed of any one material selected from ITO, IWO, IZO, and AZO. 
     
     
         9 . The method of  claim 8 , wherein the electrode forming material is formed of a conductive paste containing fine metal particles, a binder and a solvent, and the fine metal particles include at least one selected from copper, copper-silver, and copper-nickel. 
     
     
         10 . The method of  claim 9 , wherein the fine metal particles are formed into micro- or nano-sized particles, and the conductive paste is formed by mixing 50 to 80% by weight, 15 to 40% by weight, and 5 to 40% by weight of the fine metal particles, the binder, and the solvent, respectively, with respect to a total weight of the conductive paste. 
     
     
         11 . The method of  claim 1 , further comprising;
 forming a tunnel layer on the semiconductor substrate before the forming of the metal compound on the semiconductor substrate,   wherein the tunnel layer is formed of intrinsic amorphous silicon or silicon oxide.