Monolithic segmented led array architecture with islanded epitaxial growth

Abstract

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

1 . A device comprising:
 a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer;   a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region; and   a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.   
     
     
         2 . The device of  claim 1 , wherein the first sidewall and the second sidewall comprise portions of the epitaxial layer formed in trenches etched into a sapphire substrate. 
     
     
         3 . The device of  claim 1 , wherein the epitaxial layer comprises:
 a first semiconductor layer;   an active region on the first semiconductor layer; and   a second semiconductor layer on the active region.   
     
     
         4 . The device of  claim 3 , wherein the first semiconductor layer comprises an n-type doped Type III-nitride and the second semiconductor layer a p-type doped III-nitride. 
     
     
         5 . The device of  claim 3 , wherein the active region comprises a partially doped or undoped Type III-nitride. 
     
     
         6 . The device of  claim 3 , wherein the active region extends beyond an outer edge of at least one of the first isolation region and the second isolation region. 
     
     
         7 . The device of  claim 1 , wherein the first isolation region and the second isolation region comprise a dielectric material. 
     
     
         8 . The device of  claim 1 , wherein the epitaxial layer comprises a Type III-nitride. 
     
     
         9 . The device of  claim 1 , wherein the first sidewall is aligned with the first isolation region and the second sidewall is aligned with the second isolation region. 
     
     
         10 . A light emitting diode (LED) array, comprising:
 an isolation region between a first metal contact on a first LED and a second metal contact on a second LED;   one or more sidewalls on the first LED and on the second LED, the one or more sidewalls distal to the isolation region; and   a wavelength converting layer on the first LED and the second LED between the one or more sidewalls.   
     
     
         11 . The LED array of  claim 10 , wherein the first LED and the second LED comprise a common active region. 
     
     
         12 . The LED array of  claim 10 , wherein the first LED and the second LED comprise:
 a first semiconductor layer;   an active region on the first semiconductor layer; and   a second semiconductor layer on the active region.   
     
     
         13 . The LED array of  claim 10 , wherein a sidewall of the one or more sidewalls is aligned with the isolation region. 
     
     
         14 . A method of forming a device, the method comprising:
 forming a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer; and   forming a wavelength converting layer on a second surface of the epitaxial layer between the first sidewall and the second sidewall, the first surface distal to the second surface.   
     
     
         15 . The method of  claim 14 , wherein the first sidewall and the second sidewall comprise portions of the epitaxial layer formed in trenches etched into a sapphire substrate. 
     
     
         16 . The method of  claim 14 , wherein the epitaxial layer comprises:
 a first semiconductor layer;   an active region on the first semiconductor layer; and   a second semiconductor layer on the active region.   
     
     
         17 . The method of  claim 16 , wherein the first semiconductor layer comprises an n-type doped Type III-nitride and the second semiconductor layer a p-type doped Type III-nitride. 
     
     
         18 . The method of  claim 16 , wherein the active region comprises a partially doped or undoped Type III-nitride. 
     
     
         19 . The method of  claim 16 , wherein the active region extends beyond an outer edge of at least one of the first isolation region and the second isolation region. 
     
     
         20 . The method of  claim 14 , wherein the first sidewall is aligned with the first isolation region and the second sidewall is aligned with the second isolation region.