Structures, methods and applications for electrical pulse anneal processes

Abstract

Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.

What is claimed: 
     
         1 . A structure comprising:
 an N+ diffusion on a substrate;   a P+ diffusion on the substrate and in direct electrical and physical contact with the N+ diffusion, thereby forming an ESD diode; and   a device between the N+ diffusion and the P+ diffusion,   wherein the N+ diffusion and the P+ diffusion are in a side by side relationship.   
     
     
         2 . The structure of  claim 1 , further comprising a contact on the P+ diffusion and a contact on the N+ diffusion to provide an electrical pulse to the P+ diffusion and allow the electrical pulse to flow out of the N+ diffusion, respectively. 
     
     
         3 . The structure of  claim 1 , wherein the N+ diffusion and the P+ diffusion form an ESD N+/P+ structure. 
     
     
         4 . The structure of  claim 1 , wherein the N+ diffusion and the P+ diffusion are formed on a BOX layer formed on the substrate. 
     
     
         5 . The structure of  claim 4 , wherein the N+ diffusion acts as a cathode and the P+ diffusion acts as an anode. 
     
     
         6 . The structure of  claim 5 , further comprising contacts for supplying an electrical pulse to generate heat across an active region. 
     
     
         7 . The structure of  claim 6 , wherein a first of the contacts allows an electric pulse to flow through the anode and a second of the contacts allows the electric pulse to flow out of the cathode. 
     
     
         8 . The structure of  claim 7 , wherein the device is an active device formed in electrical contact with the N+ diffusion and P+ diffusion. 
     
     
         9 . The structure of  claim 7 , wherein the device is a passive device formed in electrical contact with the N+ diffusion and P+ diffusion. 
     
     
         10 . An electrostatic discharge (ESD) N+/P+ structure comprising:
 an N+ diffusion on a substrate;   a P+ diffusion on the substrate and in electrical contact with the N+ diffusion; and   a device between the N+ diffusion and the P+ diffusion,   wherein the N+ diffusion and the P+ diffusion are in a side by side relationship, and the device is a single device between the N+ diffusion and the P+ diffusion.   
     
     
         11 . The structure of  claim 10 , further comprising a contact on the P+ diffusion and a contact on the N+ diffusion to provide an electrical pulse to the P+ diffusion and allow the electrical pulse to flow out of the N+ diffusion, respectively. 
     
     
         12 . The structure of  claim 10 , wherein the N+ diffusion and the P+ diffusion form an ESD N+/P+ structure. 
     
     
         13 . The structure of  claim 10 , wherein the N+ diffusion and the P+ diffusion are formed on a BOX layer formed on the substrate. 
     
     
         14 . The structure of  claim 13 , wherein the N+ diffusion acts as a cathode and the P+ diffusion acts as an anode. 
     
     
         15 . The structure of  claim 14 , further comprising contacts for supplying an electrical pulse to generate heat across an active region. 
     
     
         16 . The structure of  claim 15 , wherein a first of the contacts allows an electric pulse to flow through the anode and a second of the contacts allows the electric pulse to flow out of the cathode. 
     
     
         17 . The structure of  claim 16 , wherein the device is an active device formed in electrical contact with the N+ diffusion and P+ diffusion. 
     
     
         18 . The structure of  claim 16 , wherein the device is a passive device formed in electrical contact with the N+ diffusion and P+ diffusion.