Photovoltaic device and photovoltaic unit

Abstract

A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

1 . A photovoltaic device comprising:
 a p- or n-type semiconductor substrate;   a p-type amorphous semiconductor film on a first-face side of the semiconductor substrate;   an n-type amorphous semiconductor film on the first-face side of the semiconductor substrate;   p-electrodes on the p-type amorphous semiconductor film; and   n-electrodes on the n-type amorphous semiconductor film,   wherein:   the p-electrodes and the n-electrodes are arranged at intervals;   the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate;   the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and   the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.   
     
     
         2 . The photovoltaic device according to  claim 1 , wherein the p-type amorphous semiconductor film is extended so as to cover a side face of the semiconductor substrate. 
     
     
         3 . The photovoltaic device according to  claim 1 , wherein the p-electrodes are extended closer to a periphery of the semiconductor substrate than are those n-electrodes that are adjacent to the p-electrodes. 
     
     
         4 . The photovoltaic device according to  claim 3 , wherein the p-electrodes have ends thereof separated from the semiconductor substrate by a distance of from 0 mm to 1 mm inclusive. 
     
     
         5 . The photovoltaic device according to  claim 3 , wherein the p-electrodes have ends thereof separated from proximate ends of the n-electrodes by a distance of from 0.3 mm to 2 mm inclusive. 
     
     
         6 . The photovoltaic device according to  claim 1 , wherein the p-electrodes have, near a periphery of the semiconductor substrate, ends thereof where the p-electrodes are broadened in a direction that differs from an extension direction of the p-electrodes. 
     
     
         7 . The photovoltaic device according to  claim 1 , wherein the p-electrodes and the n-electrodes are extended in a single direction. 
     
     
         8 . The photovoltaic device according to  claim 1 , wherein the p-electrodes and the n-electrodes are arranged like islands. 
     
     
         9 . A photovoltaic unit comprising:
 the photovoltaic device according to  claim 1 ; and   a wiring sheet,   wherein:   the wiring sheet includes an insulating base member, first wires on the insulating base member, and second wires on the insulating base member;   the p-electrodes are electrically connected to the first wires; and   the n-electrodes are electrically connected to the second wires.