Method of manufacturing semiconductor device

Abstract

Provided is a method of manufacturing a semiconductor device according to an embodiment, including implanting carbon ions into a predetermined region of a silicon substrate; forming a silicon carbide layer on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions; and removing at least a portion of the silicon substrate to expose the silicon carbide layer.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 implanting carbon ions into a predetermined region of a silicon substrate;   forming a silicon carbide layer on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions; and   removing at least a portion of the silicon substrate to expose the silicon carbide layer.   
     
     
         2 . The manufacturing method according to  claim 1 , wherein the silicon carbide layer is formed on the silicon substrate by performing the heat treatment on the silicon substrate implanted with the carbon ions at 800° C. or higher and 1200° C. or lower. 
     
     
         3 . The manufacturing method according to  claim 1 , wherein the silicon carbide layer is formed on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions in an atmosphere of an inert gas. 
     
     
         4 . The manufacturing method according to  claim 1 , wherein the silicon carbide layer has a thickness of 20 nm or more and 100 nm or less. 
     
     
         5 . The manufacturing method according to  claim 1 , wherein a dose amount of the carbon ion implantation is 1×10 22  cm −1  or more. 
     
     
         6 . A method of manufacturing a semiconductor device, comprising:
 implanting oxygen ions into a predetermined region of a silicon substrate with a first projected range;   implanting carbon ions into the predetermined region with a second projected range shallower than the first projected range;   forming a silicon oxide layer in the silicon substrate by performing first heat treatment on the silicon substrate implanted with the oxygen ions;   forming a silicon carbide layer in the silicon substrate by performing second heat treatment on the silicon substrate implanted with the carbon ions; and   removing at least a portion of the silicon substrate to expose the silicon oxide layer and, after that, removing the silicon oxide layer to expose the silicon carbide layer.   
     
     
         7 . The manufacturing method according to  claim 6 , wherein the first projected range is 100 nm or more and 500 nm or less. 
     
     
         8 . The manufacturing method according to  claim 6 , wherein the oxygen ions are implanted multiple times while changing the first projected range. 
     
     
         9 . The manufacturing method according to  claim 6 , wherein the second projected range is 20 nm or more and 100 nm or less. 
     
     
         10 . The manufacturing method according to  claim 6 , wherein the carbon ions are implanted multiple times while changing the second projected range. 
     
     
         11 . The manufacturing method according to  claim 6 , wherein the silicon oxide layer has a thickness of 100 nm or more and 500 nm or less. 
     
     
         12 . The manufacturing method according to  claim 6 , wherein the silicon carbide layer has a thickness of 20 nm or more and 100 nm or less. 
     
     
         13 . The manufacturing method according to  claim 6 , wherein the first heat treatment and the second heat treatment are performed in an atmosphere of an inert gas. 
     
     
         14 . The manufacturing method according to  claim 6 , wherein a temperature of the first heat treatment and the second heat treatment is 800° C. or higher and 1200° C. or lower. 
     
     
         15 . The manufacturing method according to  claim 6 , wherein, after the oxygen ions are implanted, the carbon ions are implanted. 
     
     
         16 . The manufacturing method according to  claim 6 , wherein the first heat treatment and the second heat treatment are performed at the same time. 
     
     
         17 . The manufacturing method according to  claim 6 , wherein a dose amount of the carbon ion implantation is 1×10 22  cm −3  or more. 
     
     
         18 . A semiconductor device comprising:
 a silicon carbide layer being a silicon carbide thin film having a thickness of 20 nm or more and 100 nm or less; and   a silicon substrate remaining portion provided around the silicon carbide layer.